Characterization methodology for lead zirconate titanate thin films with interdigitated electrode structures

Nigon, Robin; Ræder, Trygve Magnus; Muralt, Paul

doi:10.1063/1.4983772

Cited by 21 publications

(32 citation statements)

References 20 publications

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“…as shown in [24]. Similar to reference [30], the total electric charge per unit width on an electrode of the IDE cantilever can be found from Gauss' law by integrating the normal component of the electric displacement vector around a contour as shown in Fig. 4 and summing over all fingers of the electrode.…”

Section: K Smentioning

confidence: 91%

Constitutive Equations of Piezoelectric Layered Beams With Interdigitated Electrodes

Nguyen

Hanke

Halvorsen

2018

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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This paper establishes the constitutive equations, or linear two-port models, of piezoelectric layered beams with interdigital electrodes (IDEs). The effect of the nontrivial field on the transduction is analyzed. Based on conformal mapping techniques, we derive new analytic expressions for the capacitance, the electric field, and the electromechanical coupling factor of an anisotropic dielectric with the IDE configuration on top. The IDE capacitance with an anisotropic permittivity can be treated as the one with an isotropic permittivity. The complex expression for the nonuniform field is simplified to a quadratic form. A correction is required for the transducer's coupling constant. All modifications are expressed analytically. The analytic models are verified against the finite element method. Finally, the two-port models help to compare the devices with other electrode configurations, such as beams with a top and bottom electrode.

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Section: K Smentioning

confidence: 91%

Constitutive Equations of Piezoelectric Layered Beams With Interdigitated Electrodes

Nguyen

Hanke

Halvorsen

2018

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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“…Reference samples made of sputtered 100-nm-thick Pt electrodes with the same IDE design were also realized by standard lithography/ion beam etching process. The absolute values of electric field E , relative dielectric permittivity ε ’ and polarization P were extracted from the measurements as recently described by Nigon et al [ 16 ]. Because the gap and width of the fingers are significantly larger than the thickness of the film ( a , b >> t f ), the effective gap a + Δ a (Δ a = 1.324 × t f ) was used in the calculations.…”

Section: Methodsmentioning

confidence: 99%

Transparent Ferroelectric Capacitors on Glass

Sette¹,

Girod²,

Leturcq³

et al. 2017

Micromachines

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We deposited transparent ferroelectric lead zirconate titanate thin films on fused silica and contacted them via Al-doped zinc oxide (AZO) transparent electrodes with an interdigitated electrode (IDE) design. These layers, together with a TiO2 buffer layer on the fused silica substrate, are highly transparent (>60% in the visible optical range). Fully crystallized Pb(Zr0.52Ti0.48)O3 (PZT) films are dielectrically functional and exhibit a typical ferroelectric polarization loop with a remanent polarization of 15 μC/cm2. The permittivity value of 650, obtained with IDE AZO electrodes is equivalent to the one measured with Pt electrodes patterned with the same design, which proves the high quality of the developed transparent structures.

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“…This configuration avoids using the bottom electrode, thus facilitating the substrate's choice with desired lattice mismatch (and therefore biaxial strain). 29 The sinusoidal electric field was generated by AIM-TTI TGP 3100 function generator, amplified by a…”

Section: Online Contentmentioning

confidence: 99%

Atomically engineered interfaces yield extraordinary electrostriction

Pryds

Zhang

Park

et al. 2021

Preprint

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Electrostriction is a property of all the dielectric materials where an applied electric field induces a mechanical deformation proportional to the square of the electric field. The magnitude of the effect is usually minuscule. However, recent discoveries of symmetry-breaking phenomena at interfaces opens up the possibility to extend the electrostrictive response to a broader family of dielectric materials.1,2 Here, we engineer the electrostrictive effect by epitaxially depositing alternating layers of Gd2O3-doped CeO2 and Er2O3-stabilized δ-Bi2O3 with atomically controlled interfaces on NdGaO3 substrates. We find that the electrostriction coefficient reaches 2.38×10-14 m2/V2, exceeding the best-known relaxor ferroelectrics by three orders of magnitude. Our atomic-scale calculations show that the extraordinary electrostriction coefficient is driven by the coherent strain imparted by the interfacial lattice mismatches. Thus, artificial heterostructures open a new avenue to design and manipulate electrostrictive materials and devices for nano/micro actuation and cutting-edge sensor applications.

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Characterization methodology for lead zirconate titanate thin films with interdigitated electrode structures

Cited by 21 publications

References 20 publications

Constitutive Equations of Piezoelectric Layered Beams With Interdigitated Electrodes

Constitutive Equations of Piezoelectric Layered Beams With Interdigitated Electrodes

Transparent Ferroelectric Capacitors on Glass

Atomically engineered interfaces yield extraordinary electrostriction

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