“…The studies [ 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 ] show that the IGBT failure precursor parameters can directly or indirectly reflect the health state of the IGBT, mainly including collector-emitter voltage (V CE ), gate-emitter threshold voltage (V GEth ), collector shutdown current (I C ), gate leakage current (I G ), junction temperature and thermal resistance, etc.…”