Characterization and simulation of proton exchanged integrated optical modulators with various dielectric buffer layers

Charczenko, Walter; Weitzman, Peter S.; Klotz, Holger; Surette, Marc R.; Dunn, John M.; Mickelson, Alan

doi:10.1109/50.64927

Cited by 9 publications

(2 citation statements)

References 34 publications

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“…However, due to a lack of knowledge of their concentration dependence and due to the fact the measured concentration profile fits the expression of (13), described below, reasonably well [13], our assumption is justified. For a rectangular initial exchange region (depth = h, width = w ) with a width dependent uniform proton concentration C,",(w), the solution to (12) is given by [20] (See Eq. (13) below) where dy = 2(D,yt,)1/2 is the diffusion distance in the width direction after annealing and t, is the annealing time.…”

Section: B Model For Index Changementioning

confidence: 99%

“…In the application of guided wave frequency conversion, only the fundamental mode will be considered. Upon the introduction of the normalized width Equation (18) gives the normalized mode indexbpq = (1 -R)p' + ( -:y)2$ 112 { p + [ 1 -(1 + 4 R i (:)2V2) ] }(20) Here,= ( 1 -M ) + ($)2+contains the dependence on the normalized depth V d and the mode order in the depth direction, q.3) Modefield Distributions: The mode field distribution in APE channel waveguides can also be modeled by the quasianalytical technique. Under the effective index approximation, the 2-D wave equation can be separated into two 1-D equations.…”

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confidence: 99%

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Characterization of annealed proton exchanged LiNbO/sub 3/ waveguides for nonlinear frequency conversion

Cao

Ramaswamy

Srivastava

1992

J. Lightwave Technol.

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A detailed characterization of annealed proton exchanged (APE) channel LiNbO3 waveguides is reported. It involves the measurement and modeling of the refractive index profile of planar waveguides as a function of annealing time and wavelength. It is shown that index change dependence on annealing can be modeled by segments which are piece-wise linear with proton concentration in the three phases which the crystal exhibits during annealing. In the fully annealed samples corresponding to the a-phase, the index profile is described by a function, for which closed form analytical expressions for the propagation constants and the corresponding mode field distributions are easily obtained.The planar waveguide characterization results are used to predict the refractive index profile of the annealed channel waveguides in terms of analytical expressions which allow accurate determination of the channel waveguide propagation constants and field profiles. The theoretical results correlate well with the experimentally measured mode indexes and mode field profiles of channel waveguides fabricated by varying both the mask width and annealing time.Finally, the results are used to determine the phase mismatch between the pump and the second harmonic waves in APE channel waveguides. It is shown that in waveguides with optimum dimensions, the phase mismatch is relatively insensitive to waveguide dimensional fluctuations.

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Section: B Model For Index Changementioning

confidence: 99%

mentioning

confidence: 99%

Characterization of annealed proton exchanged LiNbO/sub 3/ waveguides for nonlinear frequency conversion

Cao

Ramaswamy

Srivastava

1992

J. Lightwave Technol.

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Lithium niobate traveling‐wave phase modulator with an indium tinoxide buffer layer

Chang¹,

Chuang²,

Wang³

1992

Micro & Optical Tech Letters

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Characteristics of traveling‐wave phase modulators fabricated with indium tinoxide (ITO) and silicon dioxide (SiO2) as buffer layers on Z‐cut LiNbO3 substrate are compared at the wavelength 0.6328 μm. For those with an ITO buffer layer, a half‐wave voltage of 8.1 V and a bandwidth of 10 GHz are obtained, whereas for those with an SiO2 buffer layer, a half‐wave voltage of 9.6 V and bandwidth 11 GHz are obtained. Hence the use of an ITO buffer layer may cause a reduction of the driving voltage and be capable of broadband operation.

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Possibility of dc drift reduction of Ti:LiNbO3 modulators via dry O2 annealing process

Nagata

Ichikawa

Kobayashi

et al. 1994

Applied Physics Letters

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The possibility of the dc drift reduction of Ti:LiNbO3 optical modulators via the dry O2 annealing process of the wafer is investigated. In such modulators, the hydrogen impurities are reduced compared against those in the wet O2 annealed ones which exhibit large dc drifts. The dc drifts are observed to be less than 3 V for the dc bias application of 5 V at 80 °C through 60 h, but the dc drift in the second measurement of the same modulator is found to 5 V. After the bias application, the migration of H+ ions are observed in the Ti:LiNbO3.

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Characterization and simulation of proton exchanged integrated optical modulators with various dielectric buffer layers

Cited by 9 publications

References 34 publications

Characterization of annealed proton exchanged LiNbO/sub 3/ waveguides for nonlinear frequency conversion

Characterization of annealed proton exchanged LiNbO/sub 3/ waveguides for nonlinear frequency conversion

Lithium niobate traveling‐wave phase modulator with an indium tinoxide buffer layer

Possibility of dc drift reduction of Ti:LiNbO3 modulators via dry O2 annealing process

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