Characterization and Photovoltaic Effect of (Sb2O3: Metal Oxides)/ C-Si Heterojunctions

Abstract

This work concerns the synthesis of two types of composites based on antimony oxide named (Sb2O3):(WO3, In2O3). Thin films were fabricated using pulsed laser deposition. The compositional analysis was explored using Fourier transform infrared spectrum (FTIR), which confirms the existence of antimony, tungsten, and indium oxides in the prepared samples. The hall effect measurement showed that antimony oxide nanostructure thin films are p-type and gradually converted to n-type by the addition of tungsten oxide, while they are converted almost instantly to n-type by the addition of indium oxide. Different heterojunction solar cells were prepared from (Sb2O3:WO3, In2O3/Sb2Se3/c-pSi) contained forms from two layers the first was Sb2Se3 and the second was (Sb2O3):(WO3, In2O3) nanostructured thin films. The heterojunction (Sb2O3:15%WO3 Sb2Se3/c-pSi showed a maximum conversion efficiency of 9% and exhibits an open circuit voltage (Voc) of 300 mV, short circuit current (Isc) of 35 mA, and a fill factor of 0.429 at an intensity of illumination of 100 mW/cm2.