Characterization and optimization of zinc oxide films by r.f. magnetron sputtering

Sundaram, Kalpathy B.; Khan, Arshad

doi:10.1016/s0040-6090(96)09274-7

Cited by 226 publications

(91 citation statements)

References 24 publications

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“…On the other hand the increase of the oxygen gas flow would decrease the argon partial pressure and subsequently decrease bombarded argon ions towards targets 25,26 . Figure (1-b) shows SEM cross section for ZnO/ Si film and equals to 150 nm thickness.…”

Section: Deposition Rate and Composition Measurementmentioning

confidence: 99%

Oxygen Effect on Structural and Optical Properties of ZnO Thin Films Deposited by RF Magnetron Sputtering

2017

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ZnO thin films with wurtzite structure have been grown on Si (100) and glass substrates using radio frequency (rf) magnetron sputtering at room temperature. The ZnO thin films have been characterised by XRD. The (002) orientation is observed at zero Oxygen flow after the (100) developed with increasing oxygen ratio. Usually, this orientation (100) is difficult to obtain. The thickness of ZnO films was confirmed by cross-section SEM, and their stoichiometry was measured by Energy Dispersive X-ray Spectroscopy (EDX) and Rutherford backscattering spectroscopy (RBS). The optical band gaps have been determined using UV spectra and found to be varied from 3.24 to 3.29 eV as a function of the oxygen ratio. Moreover, photoluminescence (PL) spectra showed more defects at higher oxygen flow. The crystalline quality of the deposited film degrades with oxygen enhancements.

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Section: Deposition Rate and Composition Measurementmentioning

confidence: 99%

Oxygen Effect on Structural and Optical Properties of ZnO Thin Films Deposited by RF Magnetron Sputtering

2017

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“…Despite the lower electromechanical characteristics when compared to other semiconductor materials, ZnO may have advantages because its crystallographic structure is well defined 8 . The ordered crystallographic configuration of ZnO is related to the substrate type and deposition parameters employed during its formation.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of piezoresistivity properties of sputtered ZnO thin films

et al. 2014

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Zinc oxide (ZnO) thin films were deposited by RF reactive magnetron sputtering on silicon (100) substrates under different experimental conditions. ZnO films were studied before and after annealing treatment at 600 °C. The crystallinity, electrical resistivity, stoichiometry, thickness, and elastic modulus of the films were investigated. ZnO piezoresistors were produced using microelectronics processes, such as photolithography, lift-off, and reactive ion etching (RIE). Cantilever method was used to determine the gauge factor, and measurements of Temperature Coefficient of Resistance (TCR) were performed on a hotplate. The optimization of the deposition conditions produced ZnO thin films with controlled stoichiometry (ZnO), crystalline microstructure (phase wurzite, 002), high elastic modulus (156 GPa), and low electrical resistivity (0.072 ohm.cm), which are good properties for application as piezoresistive pressure microsensor. In addition, the ZnO piezoresistors had a GF of 2.6 on the deformation in the plane (100) and TCR of -1610 ppm/K up to 250 °C.

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“…Materials exhibiting high piezoelectric coupling factor are usually highly oriented along one axis. For ZnO the c-axis orientation presents the highest piezoelectric coefficient and for this reason many works, more or less recent (Muthukumar et al, 2001;Sundaram et al, 1997;Yan et al, 2007), focused their attention on the XRD analysis and electrical characterization of the piezoelectric layers, often neglecting the analysis of the film composition. The lack of one of the elements in the film can be detrimental in the final response of the material when used in the fabrication of piezoelectric devices.…”

Section: X-ray Analysis On Zno Thin Filmsmentioning

confidence: 99%

X-Ray Analysis on Ceramic Materials Deposited by Sputtering and Reactive Sputtering for Sensing Applications

Gazia¹,

Chiodoni²,

Celasco³

et al. 2012

X-Ray Spectroscopy

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Characterization and optimization of zinc oxide films by r.f. magnetron sputtering

Cited by 226 publications

References 24 publications

Oxygen Effect on Structural and Optical Properties of ZnO Thin Films Deposited by RF Magnetron Sputtering

Oxygen Effect on Structural and Optical Properties of ZnO Thin Films Deposited by RF Magnetron Sputtering

Evaluation of piezoresistivity properties of sputtered ZnO thin films

X-Ray Analysis on Ceramic Materials Deposited by Sputtering and Reactive Sputtering for Sensing Applications

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