Characterization and optimization of the interface quality in amorphous/crystalline silicon heterojunction solar cells

Maydell, K.v.; Korte, Lars; Laades, A.; Stangl, Rolf; Conrad, E.; Lange, F.; Schmidt, M.

doi:10.1016/j.jnoncrysol.2005.12.027

Cited by 20 publications

(12 citation statements)

References 5 publications

(8 reference statements)

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“…The literature indicates that an intrinsic hydrogenated amorphous silicon (a-Si:H) layer can be deposited between an emitter layer and a c-Si substrate, or a BSF layer and a cSi substrate to achieve a maximum surface passivation effect for the c-Si substrate [1,2,[7][8][9]. Researchers have therefore, become increasingly interested in achieving control over thin intrinsic a-Si:H layer behavior and passivation properties, and several simulation models have been developed to simulate the performance of thin a-Si:H/c-Si heterojunction solar cells.…”

Section: Introductionmentioning

confidence: 99%

“…Even relatively large total interface states densities above 10 11 cm −2 can be used to achieve good quality solar cells with efficiencies of above 20 %. Furthermore, Maydell et al [9] have recently suggested that the incorporation of interface defects leads to a strong decrease in open-circuit voltage but exerts weak effects on short-circuit current density.…”

Section: Introductionmentioning

confidence: 99%

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Analytical study of a-Si:H/c-Si thin heterojunction solar cells with back surface field

Krichen

Arab

2015

J Comput Electron

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In this paper, the high efficiency TCO-n(aSi:H)-i(aSi:H)-p(c-Si)-p + (aSi:H) heterojunction with intrinsic thin-layer (HIT) solar cell is analyzed. The effects of the intrinsic thin-layer and the back surface field (BSF) on the photovoltaic parameters of thin solar cells are discussed. The analytical results show that the intrinsic layer inserted at the a-Si:H/c-Si interface decreases the density of interface states. If the interface state density is lower than 10 11 cm −2 in the presence of an intrinsic thin layer a-Si:H, the effect of recombination current density on the photovoltaic parameters becomes low. The BSF formed by hydrogenated amorphous silicon layer can increase the conversion efficiency by about 2.6 % and the open-circuit voltage to ∼80 mV as compared to the HIT solar cell wherein the BSF is realized by crystalline silicon. The results obtained from the simulation studies are in good agreement with the literature, and might open promising opportunities for enhancing the design parameters of HIT cells. Interface state density α c−Si (α a−Si ) Absorption coefficient in the c-Si (aSi:H) φ (λ) Incident photon flux R (λ) Reflection coefficient at the front surface H Cell thickness W B Base thickness S p (S n ) Recombination velocity at the front (back) contact V th Thermal velocity J ph,T (λ) Total photocurrent density J 0D Reverse saturation current density in the emitter and base region J 0Rb Recombination current density in the bulk J 0Ri Recombination current density at the heterojunction interface J sc Short-circuit current density V oc Open-circuit voltage η Cell efficiency FF Fill factor P in Power density output R s (R sh ) Series (shunt) resistance 123 J Comput Electron

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Analytical study of a-Si:H/c-Si thin heterojunction solar cells with back surface field

Krichen

Arab

2015

J Comput Electron

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“…As conventional energy sources such as coal, oil, and natural gas are exhausted, solar energy is becoming increasingly crucial [1][2][3][4][5][6][7][8][9][10][11][12][13]. The combustion of fossil fuels produces carbon dioxide, which causes the greenhouse effect.…”

Section: Introductionmentioning

confidence: 99%

“…It was expected that the field-effect passivation would improve the short-circuit current density (J sc ) and V oc . Because a-Si and c-Si interfaces have substantial amounts of defects [13], enhancing the electric fields near a-Si and c-Si interfaces can improve carrier mobility and reduce carrier traps at the interfaces.…”

Section: Introductionmentioning

confidence: 99%

Silicon Heterojunction Solar Cells Using AlOx and Plasma-Immersion Ion Implantation

Lin

You

et al. 2014

Energies

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Aluminum oxide (AlO x ) and plasma immersion ion implantation (PIII) were studied in relation to passivated silicon heterojunction solar cells. When aluminum oxide (AlO x ) was deposited on the surface of a wafer; the electric field near the surface of wafer was enhanced; and the mobility of the carrier was improved; thus reducing carrier traps associated with dangling bonds. Using PIII enabled implanting nitrogen into the device to reduce dangling bonds and achieve the desired passivation effect. Depositing AlO x on the surface of a solar cell increased the short-circuit current density (J sc ); open-circuit voltage (V oc ); and conversion efficiency from 27.84 mA/cm 2 ; 0.52 V; and 8.97% to 29.34 mA/cm 2 ; 0.54 V; and 9.68%; respectively. After controlling the depth and concentration of nitrogen by modulating the PIII energy; the ideal PIII condition was determined to be 2 keV and 10 min. As a result; a 15.42% conversion efficiency was thus achieved; and the J sc ; V oc ; and fill factor were 37.78 mA/cm 2 ; 0.55 V; and 0.742; respectively.

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“…The interface recombination velocity, which can significantly reduce the efficiency of solar cells, is mainly affected by the density and the character of interface states. The solar cell performance degrades significantly if the area density of interface states, D it , exceeds 10 11 cm À2 [3,4].…”

Section: Introductionmentioning

confidence: 99%

Wet-chemical passivation of atomically flat and structured silicon substrates for solar cell application

Angermann

Rappich

Korte

et al. 2008

Applied Surface Science

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Characterization and optimization of the interface quality in amorphous/crystalline silicon heterojunction solar cells

Cited by 20 publications

References 5 publications

Analytical study of a-Si:H/c-Si thin heterojunction solar cells with back surface field

Analytical study of a-Si:H/c-Si thin heterojunction solar cells with back surface field

Silicon Heterojunction Solar Cells Using AlOx and Plasma-Immersion Ion Implantation

Wet-chemical passivation of atomically flat and structured silicon substrates for solar cell application

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