Characterization and optimization of semiconductor optical amplifier for ultra high speed applications: A review

Agarwal, Vipul; Agrawal, Monika

doi:10.1109/spaces.2018.8316349

Cited by 13 publications

(5 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The gain of the SOA increases with increasing injection current and concentration of injected carriers. At a given bias current, the output power of the SOA increases linearly with the input power; this linear relationship corresponds to the small-signal gain ( G 0 ), which is expressed as follows [ 36 ]:

where

is the material gain coefficient,

is the internal loss coefficient, τ is the carrier lifetime, and L is the cavity length. In practice, a key parameter is the saturated output power (

), which is typically defined as the output power corresponding to a 3 dB decrease in gain, as expressed by [ 37 ]:

…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Low-Polarization, Broad-Spectrum Semiconductor Optical Amplifiers

Zhang,

Tang

et al. 2024

Nanomaterials

View full text Add to dashboard Cite

Polarization-insensitive semiconductor optical amplifiers (SOAs) in all-optical networks can improve the signal-light quality and transmission rate. Herein, to reduce the gain sensitivity to polarization, a multi-quantum-well SOA in the 1550 nm band is designed, simulated, and developed. The active region mainly comprises the quaternary compound InGaAlAs, as differences in the potential barriers and wells of the components cause lattice mismatch. Consequently, a strained quantum well is generated, providing the SOA with gain insensitivity to the polarization state of light. In simulations, the SOA with ridge widths of 4 µm, 5 µm, and 6 µm is investigated. A 3 dB gain bandwidth of >140 nm is achieved with a 4 µm ridge width, whereas a 6 µm ridge width provides more output power and gain. The saturated output power is 150 mW (21.76 dB gain) at an input power of 0 dBm but increases to 233 mW (13.67 dB gain) at an input power of 10 dBm. The polarization sensitivity is <3 dBm at −20 dBm. This design, which achieves low polarization sensitivity, a wide gain bandwidth, and high gain, will be applicable in a wide range of fields following further optimization.

show abstract

where

is the material gain coefficient,

is the internal loss coefficient, τ is the carrier lifetime, and L is the cavity length. In practice, a key parameter is the saturated output power (

), which is typically defined as the output power corresponding to a 3 dB decrease in gain, as expressed by [ 37 ]:

…”

Section: Resultsmentioning

confidence: 99%

Section: Simulation and Design Of The Soa Structurementioning

confidence: 99%

Low-Polarization, Broad-Spectrum Semiconductor Optical Amplifiers

Zhang,

Tang

et al. 2024

Nanomaterials

View full text Add to dashboard Cite

show abstract

“…The input and output terminals of the unidirectional optical amplifier are shared by the upstream and downstream inputs, and only one of the upstream/downstream inputs and outputs is activated at the same time through the control of VOA1 and VOA2, avoiding cross modulation and noise transfer between bidirectional optical signals. Common choices include erbium-doped fiber amplifiers (EDFAs) and semiconductor optical amplifiers (SOAs), etc 9,10 .…”

Section: Methodsmentioning

confidence: 99%

Optical true time delay technique with bidirectional consistency based on unidirectional optical amplifier

Liu,

Dong,

Tan

et al. 2023

AOPC 2023: AI in Optics and Photonics

View full text Add to dashboard Cite

“…The complex amplitude of the carrier density modulation 2, in the second section can be calculated as in (20) by small-signal modeling using (10)- (12), and by applying the derivative of (19). We consider first order modulation terms, and substitute (16) into the derivative of (19).…”

Section: Carrier Density Modulation In the Second Sectionmentioning

confidence: 99%

Small-Signal Analysis in Two Calculation Sections and Experimental Validation of Up-Converted Coherent Population Oscillations in Semiconductor Optical Amplifiers

et al. 2021

View full text Add to dashboard Cite

This paper presents theoretical and experimental analysis of up-converted coherent population oscillations (Up-CPO) in semiconductor optical amplifiers (SOAs) for tunable optical phase shift applications at high frequencies. The study of Up-CPO frequency response is carried out by a small-signal analysis of a SOA modeled by two calculation sections in order to better take into account the nonlinear effects such as the SOA gain saturation. We demonstrate that we can fully determine the dynamic parameters of Up-CPO from the experimental frequency response of an optical probe signal obtained by cross-gain modulation mechanism. The Up-CPO frequency responses are measured for three SOAs with different cut-off frequencies up to 18.45 GHz. We finally validate experimentally the obtained analytical frequency responses for the three SOAs over different operating points, each characterized by the corresponding optical gain.

show abstract

Characterization and optimization of semiconductor optical amplifier for ultra high speed applications: A review

Cited by 13 publications

References 18 publications

Low-Polarization, Broad-Spectrum Semiconductor Optical Amplifiers

Low-Polarization, Broad-Spectrum Semiconductor Optical Amplifiers

Optical true time delay technique with bidirectional consistency based on unidirectional optical amplifier

Small-Signal Analysis in Two Calculation Sections and Experimental Validation of Up-Converted Coherent Population Oscillations in Semiconductor Optical Amplifiers

Contact Info

Product

Resources

About