Characterization and modeling of long term retention in SONOS non volatile memories

Arreghini, A.; Akil, N.; Driussi, F.; Esseni, D.; Selmi, L.; Duuren, M.J. van

doi:10.1109/essderc.2007.4430964

Cited by 18 publications

(24 citation statements)

References 11 publications

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“…Simple retention models identified electron tunneling through the tunnel oxide and thermal emission from the nitride as the two dominant charge loss processes in SONOS cells [4], [7]. However, the threshold voltage dynamics during retention could be affected also by the charge distribution at the beginning of the retention experiment [7], and by the spatial redistribution of the stored charge due to the transport in the nitride.…”

Section: Introductionmentioning

confidence: 98%

“…However, the threshold voltage dynamics during retention could be affected also by the charge distribution at the beginning of the retention experiment [7], and by the spatial redistribution of the stored charge due to the transport in the nitride. At this regard we note that, although the effective electron mobility in Si 3 N 4 reported by a few authors is low (∼0.1 cm 2 /(Vs) [8]), it is still large enough to induce significant changes on the charge spatial distribution even at low fields.…”

Section: Introductionmentioning

confidence: 99%

“…This improved model allows us to simulate the programming and retention sequence; therefore, differently from [3]- [5], [7] no assumption is needed on the spatial distribution of the trapped charge at the beginning of the retention phase.…”

Section: Introductionmentioning

confidence: 99%

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Impact of the charge transport in the conduction band on the retention of Si-nitride based memories

Vianello

Driussi

Palestri

et al. 2008

ESSDERC 2008 - 38th European Solid-State Device Research Conference

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An improved model for charge injection through ONO gate stacks, that comprises carrier transport in the conduction band of the silicon nitride (Si3N4), is used to investigate the program/retention sequence of Si3N4 based (SONOS/TANOS) non volatile memories without making assumptions on the initial distribution of the trapped charge at the beginning of retention.We show that carrier transport in the Si3N4 layer impacts the spatial charge distribution and consequently several other aspects of the retention transient. The interpretation of the Arrehnius plots of the high temperature retention data, typically used to infer the trap depth from the retention activation energy is discussed. The model provides a simple explanation of the small threshold voltage increase observed during retention experiments of thick tunnel oxide ONO stacks.

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Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

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Impact of the charge transport in the conduction band on the retention of Si-nitride based memories

Vianello

Driussi

Palestri

et al. 2008

ESSDERC 2008 - 38th European Solid-State Device Research Conference

Self Cite

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“…Charge loss mechanisms of CT cells has been deeply investigated [13], identifying two main discharging paths: the first is related to thermal excitation of trapped carriers, the second one is due to direct tunneling through the thin tunnel oxide.…”

Section: Data Retentionmentioning

confidence: 99%

Reliability of 3D NAND Flash Memories

2016

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In this chapter the main reliability mechanisms affecting 3D NAND memories will be addressed, providing a comparison between 3D FG and 3D CT devices in terms of reliability and expected performances. Starting from an analysis of basic reliability issues related to both physical and architectural aspects affecting NAND memories, the specific physical mechanisms impacting the reliability of 2D CT NAND will be addressed. Then, a review of the main problems experimentally observed in different 3D CT cell concepts is reported. Finally, 3D FG memory concept is briefly introduced in order to understand the related reliability implications, and a comparison between 3D CT and 3D FG arrays is provided in terms of reliability and expected performances

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“…In this context, memories based on charge trapping layers, combined with high-k blocking oxides (as SANOS [1] and TANOS (TaN/Al2O3/SiN/SiO2/Si) [2] structures) are widely investigated for sub-32nm node generations. Several studies of TANOS-like structures have been presented, analyzing the retention mechanisms [3][4], proposing the optimization of the gate stack to improve the performances [5][6], or simulating the programming-erasingretention mechanisms [7]. Replacing SiO2 with a high-k material, as Al2O3, as top blocking layer of the conventional SONOS device increases the electric field across the tunnel oxide, while reducing the electric field across the blocking layer, during write and erase operations.…”

Section: Introductionmentioning

confidence: 99%

Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories

Bocquet

Molas

Perniola

et al. 2009

Solid-State Electronics

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In this work, we present an experimental and theoretical study of nitride trap devices with a HTO/Al2O3 bi-layer blocking oxide. Such SAONOS (Silicon/Alumina/ HTO/Nitride/Oxide/Silicon) devices are compared with standard SONOS (Silicon/HTO/Nitride/Oxide/Silicon) and SANOS (Silicon/Alumina/Nitride/Oxide/Silicon) memories. The role of the different layers (blocking oxide and control gate) is deeply analyzed, focusing on their impact on memory performance and reliability. Then, a semi-analytical model is developed, which provides a good understanding of the physical mechanisms at the origin of program/erase characteristics.

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Characterization and modeling of long term retention in SONOS non volatile memories

Cited by 18 publications

References 11 publications

Impact of the charge transport in the conduction band on the retention of Si-nitride based memories

Impact of the charge transport in the conduction band on the retention of Si-nitride based memories

Reliability of 3D NAND Flash Memories

Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories

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