Characterization and improved endurance for HfO&lt;sub&gt;2&lt;/sub&gt; resistive memory with CMP treated TiN bottom electrode

Chen, P. S.; Chen, Y. S.; Lee, H. Y.; Wu, Tong; Liu, W. H.; Gu, Pei-Yi; Chen, F.; Tsai, Ming-Jinn

doi:10.7567/ssdm.2011.p-4-8

Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials 2011

DOI: 10.7567/ssdm.2011.p-4-8

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Characterization and improved endurance for HfO<sub>2</sub> resistive memory with CMP treated TiN bottom electrode

P. S. Chen¹,

Y. S. Chen²,

H. Y. Lee³

et al.

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Characterization and improved endurance for HfO<sub>2</sub> resistive memory with CMP treated TiN bottom electrode

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