Characterization and doping effects study of high hole concentration Li-doped ZnO thin film prepared by sol–gel method

Bagheri, Niusha; Ara, M.H. Majles; Ghazyani, Nahid

doi:10.1007/s10854-015-3888-0

Cited by 14 publications

(6 citation statements)

References 24 publications

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“…Due to the reduced O 2 region being relative to oxygen deficiency in the Li-doped ZnO thin films [32], it indicates the oxygen vacancies (V O ) were decreased compared with that in the pure ZnO thin film. Thus, the defects in the ZnO thin films were reduced by using the Li doping, effectively improving the quality of the film and square resistance [33,34].…”

Section: Methodsmentioning

confidence: 99%

Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Zhao

et al. 2019

Materials

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A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 104 s. In addition, the device can sustain an excellent endurance more than 103 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

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Section: Methodsmentioning

confidence: 99%

Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Zhao

et al. 2019

Materials

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“…The decrease of near-band-edge (NBE) at around 376 nm is followed by the increase of deep-level (DL) emission is related to a radiative transition from donors to acceptors. As can be seen, the intensity of this peak decreased with lithium doping (5%), that can be attributed to filling some of Zn vacancies with Li 2+ substitutional, which leads to becoming intrinsic n-type ZnO to p-type [41] and has disappeared completely when the lithium atoms of insertion in the ZnO matrix for other lithium percentages of 5%; This behavior can be attributed to the increase of the non-radiative centers caused by the existence of strong valence of the lithium (Li 2+ ) [42]. The broad emission band located in the visible range (400-700 nm) is mainly due to point-like structural defects related to deep-level emissions, such as zinc vacancies, oxygen vacancies, interstitial zinc, and interstitial oxygen, with a shoulder yellow-orange emission.…”

Section: Pl Analysismentioning

confidence: 89%

Li-doped ZnO Sol-Gel Thin Films: Correlation between Structural Morphological and Optical Properties

Hb¹,

Wr²,

Zaghouani³

et al. 2018

J Textile Sci Eng

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Transparent Conducting Oxides (TCOs) have important device applications used in solar cells as transparent electrodes. In particular, ZnO material has been investigated for many years due to its excellent physical properties and potential applications in transparent conductive contacts when it is doped by several types of doping. If n-type doping is easily achievable in ZnO, the realization of stable and reproducible p-type ZnO is still difficult. The group I (Li, Na) atoms could be potential candidates to result in p-type ZnO. The choice of lithium as a dopant is motivated firstly by its abundance in nature, its low cost compared to other alkali metals and its wide application. Undoped and Lithium-doped zinc oxide thin films (ZnO:Li) at different percentages (5, 15 and 25%) were prepared on glass substrates, using the sol-gel spin-coating method, and the influence of the Li concentration on the structural, morphological and optical properties of the ZnO thin films was investigated. X-ray diffraction (XRD) analysis shows that the un-doped and 5 at % Li-doped films have a hexagonal wurtzite structure and are preferentially oriented along the c-axis from the substrate. SEM analysis shows a compact surface with mainly hexagonal grains. Optical transmittance measurements show that all samples have average 88% transparency in the visible light, with a sharp fall of the absorption at a wavelength (~376 nm) close to the ZnO band gap. The results suggest that the optical properties of the ZnO:Li films can be further improved for solar cell applications.

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“…3 приведена диаграмма зависимости параметров с и а кристаллической решетки ZnO от количества карбоната лития, вносимого в состав исходных смесей. Наблюдаемое значительное изменение параметра кристаллической решетки с при термообработке керамических образцов при 650 ºС может быть обусловлено снятием механических напряжений, формируемых в керамиках при искровом плазменном синтезе, а также различием величин ионных радиусов атомов Zn и Li, формированием сложных комплексов (например, Li Zn -Li i ) [8][9][10]. Согласно [11] уменьшение параметра а вызвано замещением цинка (ионный радиус 0,074 нм) в узлах решетки литием с его малым ионным радиусом (0,060 нм), а увеличение -содержанием лития в междоузлиях.…”

Section: результатыunclassified

The effect of the Li2CO3 addition of on the microstructure of ZnO ceramics

Abduev¹,

Асваров²,

Akhmedov³

et al. 2018

HDSU

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Исследованы свойства керамики, синтезированной из смесей порошков ZnO-Li 2 CO 3 методом искрового плазменного синтеза при температуре 900 ºC и давлении 50 МПа. Спекание оксида цинка в присутствии Li 2 CO 3 при температуре около 900 ºC сопровождается существенным ростом размеров зерен. На основе анализа спектров ХRD и КР показано, что синтезированная керамика содержит в своем составе зерна ZnO, легированного литием, и самостоятельную кристаллическую фазу Li 2 CO 3 на межзеренных границах. Показано, что спекание керамики ZnO-Li 2 CO 3 происходит с участием формирующейся на границах зерен жидкой фазы Li 2 CO 3, способствующей существенному увеличению скорости роста зерен и уплотнения керамики. Проанализировано поведения лития в зависимости от скорости охлаждения образцов.

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Characterization and doping effects study of high hole concentration Li-doped ZnO thin film prepared by sol–gel method

Cited by 14 publications

References 24 publications

Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Li-doped ZnO Sol-Gel Thin Films: Correlation between Structural Morphological and Optical Properties

The effect of the Li2CO3 addition of on the microstructure of ZnO ceramics

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