Characterization and design methodology for low-distortion MOSFET-C analog structures in multithreshold deep-submicrometer SOI CMOS technologies

Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS

“…When observing R ON in the right axis of Fig. 3A, all analyzed transistors of different dimensions yield on-resistances in the range between 10 kX and 300 kX, which are considered interesting values [6] for the applications of 2-MOS structures.…”

“…Anti-alias continuous-time filters, for example, are fundamental to any A/D converters and several filters [1][2][3]. Active RC filters such as the MOSFET-C are good candidates when low power is required, since they allow for the use of fully-depleted SOI devices, improving the power consumption even in deep sub-micron technologies [4][5][6]. In these filters, MOS transistors working in the linear regime are applied as tunable resistors [7].…”

“…The application of MOSFET transistors instead of resistors reduces the die area and allows for on-chip tuning resistance compensating for process and temperature variations [8]. Considering that on-resistances (R ON ) from some decades to a few hundred kilohms are generally required in such filters, long channel devices are usually applied [6]. However, the extremely non-linear behavior presented by MOSFET I-V characteristics constitutes a severe drawback, which hinders these devices to be applied as resistors.…”

Analysis of uniaxial and biaxial strain impact on the linearity of fully depleted SOI nMOSFETs

“…In this configura- tion, the device source/drain regions are used as resistor terminals and the gate voltage is tuned for a certain onresistance (R ON ). Generally long-channel transistors are used to obtain high R ON [23,24]. The study of the linearity properties has been performed in devices with W = L = 1 lm at V GT = 800 mV sweeping V DS in the range À1 V 6 V DS 6 1 V, representing a dynamic variation of 2 V peak-to-peak.…”

“…At low V GT the HD3 is dominated by the body effect whereas for larger V GT the mobility degradation related phenomena are the most important affecting HD3 [24]. As the devices have a similar process flow, we assume that the doping profile into the film is not too different leading to similar c and u B .…”