Characterization and Cu electroless plating of laser-drilled through-wafer via-holes in GaN/Al2O3

Ahn, Jae-Hyun; Kim, Hong Yeol; Koo, Hyo Chol; Kim, Jae Jeong; Kim, Jihyun

doi:10.1016/j.tsf.2009.01.160

Cited by 2 publications

(2 citation statements)

References 13 publications

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“…Deep etching of sapphire is a long and painful process, especially as the GaN top layer must not be damaged. Laser drilling [15] may possibly provide an alternative for faster and easier, but none of these processes is standard nor cheap.…”

Section: Ga Schottky Rectifiersmentioning

confidence: 99%

Active Devices for Power Electronics: SiC vs III-N Compounds – The Case of Schottky Rectifiers

Brylinski

Ménard

Thierry-Jebali

et al. 2010

MSF

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The main rectifier device structures for power electronics based on SiC and on GaN are compared and the main issues for each structure are evaluated in terms of performance and manufacturability. The driving volume markets for power electronics devices correspond to the systems working on 127, 240 and 400 V energy supply networks, setting the device voltage handling to 300, 600, and 1200V respectively. We have limited the scope hereafter to the 600 V typical target, for which SiC Schottky rectifiers are now commercially available from at least 3 sources. The key physical properties for any semiconductor material used as the active layer of a unipolar device for power electronics are the breakdown field and carriers mobility. The bulk values are very similar for SiC and GaN. Two main other key issues are related to quality of the ohmic and Schottky contacts. For the ohmic contacts, adequate solutions have been found for both SiC and GaN. Surprisingly, on hetero-epitaxial GaN layers on sapphire despite of the very high crystal defects density ( ≥ 109cm-2 ), the ideality factor of the best Schottky contacts seems very promising. On the other hand, improving this ideality factor and the reverse leakage current for Schottky contacts on GaN layers grown on silicon substrate remains a fierce challenge. For the SiC Schottky rectifiers, cost and availability of the SiC substrates appear as the main residual limiting factors today. For GaN based rectifiers, although engineering device prototypes have already been published [1], there are both basic issues to be validated regarding reverse leakage current and reliability, and also difficult manufacturing issues to be solved in relation with device reliability, directly resulting from the nature of the possible substrates: mainly sapphire and silicon.

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Section: Ga Schottky Rectifiersmentioning

confidence: 99%

Active Devices for Power Electronics: SiC vs III-N Compounds – The Case of Schottky Rectifiers

Brylinski

Ménard

Thierry-Jebali

et al. 2010

MSF

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“…Moreover, a strong affinity between the LAPs and polymer matrix also dramatically affects the reliability of the final device. 12 Uniform particle dispersion and enhanced interfacial affinity are always desirable in composite materials. Therefore, particle surface modification methods with various chemical reactions and ligands have been reported previously.…”

Section: Introductionmentioning

confidence: 99%

Highly dispersible laser activate particles via surface modification for laser direct structuring and electroless plating application

Kim

Ryu

Kim

2018

Journal of Composite Materials

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A composite of laser-activate particles and the super engineering plastic of polyphenylene sulfide was fabricated via melt-mixing. The laser-activate particle surfaces were modified using hydroperoxide and three different silane coupling agents. The laser-activate particles dramatically deteriorate the mechanical properties of polyphenylene sulfide because of its low compatibility with the polymer. However, surface modification, especially via amino silane treatment, effectively prevented the degradation of thermal and mechanical properties upon adding laser-activate particle, while modification with phenyl silane had the reverse effect. In order to confirm the different effects, solubility parameters obtained by theoretical calculation via the group contribution method were compared. Thermally and mechanically enhanced laser-activate particle/polyphenylene sulfide composites were fabricated for laser direct structuring and electroless plating applications.

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Characterization and Cu electroless plating of laser-drilled through-wafer via-holes in GaN/Al2O3

Cited by 2 publications

References 13 publications

Active Devices for Power Electronics: SiC vs III-N Compounds – The Case of Schottky Rectifiers

Active Devices for Power Electronics: SiC vs III-N Compounds – The Case of Schottky Rectifiers

Highly dispersible laser activate particles via surface modification for laser direct structuring and electroless plating application

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