Characterization and analysis of InGaN photovoltaic devices

Jani, Omkar; Honsberg, Christiana B.; Ali, Asghar; Nicol, David; Ferguson, Ian T.; Doolittle, A.; Kurtz, Sarah

doi:10.1109/pvsc.2005.1488064

Cited by 38 publications

(27 citation statements)

References 14 publications

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“…[19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] Polycrystalline, 19 nanocrystalline, 20 and amorphous 37 GaN have also shown good luminescence characteristics. Applications of polycrystalline GaN films have been demonstrated in LEDs, 38,39 white lighting, 39 UV photodetectors, 40 solar cells, 41,42 thin film transistors, 43,44 and field electron emitters, 16,45 and suitability of GaN films for application in large area flat panel displays has also been explored. 46 The potential of GaN films for these applications has thus driven the search for low cost and low temperature deposition processes on low cost substrates.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic ellipsometry studies of GaN films deposited by reactive rf sputtering of GaAs target

Biswas

Bhattacharyya

Sahoo

et al. 2008

Journal of Applied Physics

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Properties of InxGa1−xN films in terahertz range Appl. Phys. Lett. 100, 071913 (2012) Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN J. Appl. Phys. 111, 033517 (2012) Surface depletion mediated control of inter-sub-band absorption in GaAs/AlAs semiconductor quantum well systems Appl. Phys. Lett. 100, 051110 (2012) High-Q optomechanical GaAs nanomembranes Appl. Phys. Lett. 99, 243102 (2011) Mg-induced terahertz transparency of indium nitride films Appl. Phys. Lett. 99, 232117 (2011) Additional information on J. Appl. Phys. GaN films have been deposited by reactive rf sputtering of GaAs target in 100% nitrogen ambient on quartz substrates at different substrate temperatures ranging from room temperature to 700°C. A series of films, from arsenic-rich amorphous to nearly arsenic-free polycrystalline hexagonal GaN, has been obtained. The films have been characterized by phase modulated spectroscopic ellipsometry to obtain the optical parameters, viz., fundamental band gap, refractive index, and extinction coefficient, and to understand their dependence on composition and microstructure. A generalized optical dispersion model has been used to carry out the ellipsometric analysis for amorphous and polycrystalline GaN films and the variation of the optical parameters of the films has been studied as a function of substrate temperature. The refractive index values of polycrystalline films with preferred orientation of crystallites are slightly higher ͑2.2͒ compared to those for amorphous and randomly oriented films. The dominantly amorphous GaN film shows a band gap of 3.47 eV, which decreases to 3.37 eV for the strongly c-axis oriented polycrystalline film due to the reduction in amorphous phase content with increase in substrate temperature.

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Section: Introductionmentioning

confidence: 99%

Spectroscopic ellipsometry studies of GaN films deposited by reactive rf sputtering of GaAs target

Biswas

Bhattacharyya

Sahoo

et al. 2008

Journal of Applied Physics

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“…InGaN and InAlN alloys demonstrate great promise for the future of optoelectronic devices and transistors due to their excellent properties, such as high carrier velocities, strong light absorption, and radiation resistance [1,2]. Of particular note is the ability to continuously adjust the bandgap with composition, leading to complete coverage of the solar spectrum [3].…”

Section: Introductionmentioning

confidence: 99%

MBE growth and characterization of Mg‐doped InGaN and InAlN

Matthews¹,

Chen

Dong

et al. 2008

Phys. Status Solidi (c)

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We report on the growth of high quality Mg‐doped InGaN and InAlN alloys on (0001) sapphire substrates by molecular beam epitaxy. Phase separation does not occur in InxGa1‐xN films with Indium content up to 0.88. Hall measurement shows that a hole concentration of 7.7x1017 cm–3 is achieved on Mg‐doped In0.04Ga0.96N. When x > 0.11, the Hall samples exhibit strong n‐type polarity, whereas p‐type polarity is confirmed by hot probe measurement for all of Mg‐doped InGaN. Ni/Au film is deposited on Mg‐doped InxGa1‐xN as the p contact met al. A contact resistivity as high as 9.95 Ωcm2 is obtained when x = 0.25 while it is only 6.81x10–5 Ωcm2 when x = 0.85. High quality crack‐free InAlN films are also grown on sapphire substrates with AlN/InN quantum‐well buffer layers. When Mg is incorporated near the solid solubility limit, donor defects form and In0.62Al0.38N films show n‐type polarity by Hall measurement, however lower Mg flux yields p‐type polarity. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Unlike the large number of publications on InGaN LEDs, only a few papers about InGaN photovoltaic have been reported [12][13][14]. In this paper, the i-In 0.11 Ga 0.89 N p-i-n photodetector have been fabricated with the spectrum cutoff at about 400 nm and then the electrical and optical properties of the photodetector and photovoltaic will also be discussed.…”

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confidence: 99%

“…According to the theoretical estimate, the tandem solar cells of InGaN materials are expected to have conversion efficiency over 50% [10,11]. However, the quality of InGaN active layers with high In composition is not as good as the quality of GaN or InN epitaxial layers.…”

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confidence: 99%

In_0.11Ga_0.89N‐based p‐i‐n photodetector

Lee

Lin

et al. 2009

Phys. Status Solidi (c)

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The InGaN photodetector with a In composition of i‐In0.11Ga0.89N active layer have been fabricated by MOCVD system. From the photoluminescence measurement, the FWHM of InGaN epitaxial layer was only 13.8 nm. The strong luminescence peak was located at wavelength of 399 nm. We also found that the FWHM of X‐ray diffraction of GaN and InGan layer were 218 and 350 arcsec, respectively. Clear photo‐responses are also observed in InGaN photodetector with 11% content at responsivity measurement. The cut‐off range of spectral responsivity was occurred at 400 nm. The highest spectral responsivity of photodetector was 0.206 A/W at wavelength of 380 nm. The rejection ratio was approached to 103. The external quantum efficiency was about 67%. The current density‐voltage (J‐V) characteristic of i‐InGaN p‐i‐n photodetector was measured. The dark and photo current density were 1.77×10‐4 A/cm2 and 4.5×10‐2 A/cm2 when biased at ‐3 V, respectively. At photovoltaic characteristics, the Voc and Jsc of the i‐InGaN photodetector are 1.63 V and 3.1×10‐2 A/cm2, respectively. The fill factor of i‐InGaN p‐i‐n photodetector was about 37%. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Characterization and analysis of InGaN photovoltaic devices

Cited by 38 publications

References 14 publications

Spectroscopic ellipsometry studies of GaN films deposited by reactive rf sputtering of GaAs target

Spectroscopic ellipsometry studies of GaN films deposited by reactive rf sputtering of GaAs target

MBE growth and characterization of Mg‐doped InGaN and InAlN

In_0.11Ga_0.89N‐based p‐i‐n photodetector

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Characterization and analysis of InGaN photovoltaic devices

Cited by 38 publications

References 14 publications

Spectroscopic ellipsometry studies of GaN films deposited by reactive rf sputtering of GaAs target

Spectroscopic ellipsometry studies of GaN films deposited by reactive rf sputtering of GaAs target

MBE growth and characterization of Mg‐doped InGaN and InAlN

In0.11Ga0.89N‐based p‐i‐n photodetector

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Product

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In_0.11Ga_0.89N‐based p‐i‐n photodetector