Characteristics Research of a High Sensitivity Piezoelectric MOSFET Acceleration Sensor

Abstract

In order to improve the output sensitivity of the piezoelectric acceleration sensor, this paper proposed a high sensitivity acceleration sensor based on a piezoelectric metal oxide semiconductor field effect transistor (MOSFET). It is constituted by a piezoelectric beam and an N-channel depletion MOSFET. A silicon cantilever beam with Pt/ZnO/Pt/Ti multilayer structure is used as a piezoelectric beam. Based on the piezoelectric effect, the piezoelectric beam generates charges when it is subjected to acceleration. Due to the large input impedance of the MOSFET, the charge generated by the piezoelectric beam can be used as a gate control signal to achieve the purpose of converting the output charge of the piezoelectric beam into current. The test results show that when the external excitation acceleration increases from 0.2 g to 1.5 g with an increment of 0.1 g, the peak-to-peak value of the output voltage of the proposed sensors increases from 0.327 V to 2.774 V at a frequency of 1075 Hz. The voltage sensitivity of the piezoelectric beam is 0.85 V/g and that of the proposed acceleration sensor was 2.05 V/g, which is 2.41 times higher than the piezoelectric beam. The proposed sensor can effectively improve the voltage output sensitivity and can be used in the field of structural health monitoring.

Development and Characterization of ZnO Piezoelectric Thin Film Sensors on GH4169 Superalloy Steel Substrate by Magnetron Sputtering

“…The results show that the ZnO piezoelectric film sensor can measure the force in the range of 0–2.45 N. The average value of the sensitivity is lower than that of a MEMS system previously reported [ 50 ]. Because it was the first time a ZnO piezoelectric film sensor was fabricated on a GH4169 superalloy steel substrate, no reference to a similar system sensitivity was found.…”

“…where V Δ is the output voltage variation and F Δ is the variation of force. Since the sensitivity is the slope of the linear fitting line, according to Equation ( 9), the sensitivities of the five piezoelectric film sensors are: The results show that the ZnO piezoelectric film sensor can measure the force in the range of 0-2.45 N. The average value of the sensitivity is lower than that of a MEMS system previously reported [50]. Because it was the first time a ZnO piezoelectric film sensor was fabricated on a GH4169 superalloy steel substrate, no reference to a similar system sensitivity was found.…”

Thermoelastic Damping Limited Quality Factor Enhancement and Energy Dissipation Analysis of Rectangular Plate Resonators Using Nonclassical Elasticity Theory

“…Micro/nanoplates [9][10][11][12][13] are one of the paramount structures used extensively as micro/nanoresonators due to the advantages of their reduced dimensions, lower weight, surplus sensitivity, enhanced reliability, and elevated S/V ratios [14][15][16]. Smallscaled elements and structures like micro/nanoplates have attracted extensive attention due to their unique features and broad area of applications such as sensors [17][18][19][20][21], actuators [22,23], switches [24,25], filters [26][27][28][29], and pumps [30,31]. MEMS and NEMS plates can be made of various materials, such as metallic, polymeric, semiconductor-based, and even functionally graded materials.…”

Layer counting method of hard target penetration fuze based on geomagnetic signal detection

“…The most common method for layer counting is to use piezoelectric or capacitive sensors for dynamic acceleration measurement and obtaining the overload acceleration signal of the target [2][3][4] . However, in the process of multilayer target penetration, the structural response of the projectile itself will generate a large amount of high frequency oscillation signals and superpose with overload acceleration signals of the fuze.…”