Characteristics of δ -doped InGaAs/GaAs pseudomorphic double-quantum-well high electron mobility transistors

Abstract

Articles you may be interested inDouble-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor Appl. Phys. Lett. 84, 3618 (2004); 10.1063/1.1738512 AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates Free electron distribution in δ-doped InGaAs/AlGaAs pseudomorphic high electron mobility transistor structures J. Appl. Phys. 75, 1586 (1994); 10.1063/1.356395 Very high two-dimensional electron gas concentrations with enhanced mobilities in selectively double-δ-doped GaAs/InGaAs pseudomorphic single quantum well heterostructures ␦-doped InGaAs/GaAs pseudomorphic double-quantum-well high electron mobility transistors grown by low pressure metalorganic chemical vapor deposition are fabricated and demonstrated.The heterostructure with 2 m gate length and 100 Å channel spacer thickness shows a peak extrinsic transconductance and a maximum saturation current density of 121 mS/mm and 423 mA/mm at 300 K, respectively. Meanwhile, an interesting broad twin-peak transconductance plateau ͑ϳ4 V͒ is observed.

Nonlinear electron transport in GaAs/InGaAs asymmetric double-quantum-well pseudomorphic high-electron-mobility transistor structure

“…Much effort has been made to study the enhancement of the electron mobility in the InGaAs-based pseudomorphic channels by employing different structure geometry and doping profiles. [10][11][12][13][14][15] A double quantum well is an interesting system because of the occurrence of tunneling coupling in addition to the quantum confinement of the carriers. 16,17) When two separate wells are brought closer to each other, their subband wave functions overlap through the central barrier, leading to the splitting of the subband energy levels.…”