2014
DOI: 10.1016/j.jallcom.2014.05.093
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Characteristics of traps in AgIn5S8 single crystals

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Cited by 4 publications
(4 citation statements)
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“…[1,2,21] The deep carrier traps were identified by ordinary photo-induced current transient spectroscopy (PICTS) [16] and by thermally-stimulated current. [22] The trap defect concentration was moderate, in the range of 10 15 -10 16 cm -3 . Some centers with large cross-section were assigned to presence of the PSFs.…”
Section: Introductionmentioning
confidence: 95%
“…[1,2,21] The deep carrier traps were identified by ordinary photo-induced current transient spectroscopy (PICTS) [16] and by thermally-stimulated current. [22] The trap defect concentration was moderate, in the range of 10 15 -10 16 cm -3 . Some centers with large cross-section were assigned to presence of the PSFs.…”
Section: Introductionmentioning
confidence: 95%
“…Notwithstanding, conventional ternary metal sulfides have been plagued by poor stability. Thus, researchers have begun to shift their focus towards ternary metal sulfides such as ZnIn2S4 [15], CdIn2S4 [16], CuInS2 [17], and AgIn5S8 [18], which have been shown to offer richer active sites and improved stability as compared to monometallic sulfides [19,20]. Although the reduction efficiency of these compounds may be limited by the slow electron transfer behavior and high carrier recombination efficiency, strategies such as morphology control, defect engineering, heterostructure construction, and co-catalyst loading have been explored to enhance their interface structure and behavior, ultimately leading to improved conversion efficiency and selectivity [21,22].…”
Section: Introductionmentioning
confidence: 99%
“…Notwithstanding, conventional ternary metal sulfides have been plagued by poor stability. Thus, researchers have begun to shift their focus towards ternary metal sulfides, such as ZnIn 2 S 4 [15], CdIn 2 S 4 [16], CuInS 2 [17], and AgIn 5 S 8 [18], which have been shown to offer richer active sites and improved stability as compared to monometallic sulfides [19,20]. Although the reduction efficiency of these compounds may be limited by the slow electron transfer behavior and high carrier recombination efficiency, strategies such as morphology control, defect engineering, heterostructure construction, and co-catalyst loading have been explored to enhance their interface structure and behavior, ultimately leading to improved conversion efficiency and selectivity [21,22].…”
Section: Introductionmentioning
confidence: 99%