Characteristics of TiOx films prepared by chemical vapor deposition using tetrakis-dimethyl-amido-titanium and water

Lim, Gyeong Taek; Kim, Do‐Heyoung

doi:10.1016/j.tsf.2005.07.121

Cited by 69 publications

(60 citation statements)

References 17 publications

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“…The nature of precursors has an impact on the structure and composition of TiO 2 films [25]. In addition, in a study where tetrakis-dimethyl-amido-titanium was used as a precursor generating amorphous film which was annealed (300-800 • C) afterwards, the results indicated the best efficiency with annealing temperatures of 300 and 400 • C with samples containing only anatase [9]. At temperatures of 500 • C and higher rutile was also found to form on the film and a decrease in photocatalytic activity was found in contrast with our study.…”

Section: Crystallinity Of the Filmmentioning

confidence: 99%

“…Thin films, which are long-lasting and reusable, have been prepared by many different physical and chemical ways, e.g. sol-gel [4], spin-coating [7], sputtering [8] and chemical vapor deposition (CVD) method [4,9] but atomic layer deposition (ALD) technique [10,11] has recently received attention. ALD is a modification of a CVD method having a different way of introducing reactants into the chemical reactor.…”

Section: Introductionmentioning

confidence: 99%

“…Earlier studies of catalytic properties of thin films concentrated mainly on testing the degradation of dyes, mostly methylene blue, but little is known of how different organic substances react with these photocatalysts [5,9,11]. Salicylic acid (SA) was selected to act as a model compound, since it, along with many other phenolic compounds, is widely used (e.g.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Atomic layer deposited TiO2 films in photodegradation of aqueous salicylic acid

Vilhunen

Bosund

Kääriäinen

et al. 2009

Separation and Purification Technology

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Section: Crystallinity Of the Filmmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Atomic layer deposited TiO2 films in photodegradation of aqueous salicylic acid

Vilhunen

Bosund

Kääriäinen

et al. 2009

Separation and Purification Technology

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“…The employment of this technique is very attractive in all the applications where high uniformity of the thickness and high density are requested. Titanium tetrachloride (TiCl 4 ) in association with water was widely employed, but the corrosive nature of the reaction by HCl product is considered a drawback [2]. Other precursors, like titanium isopropoxide of the alkoxide group (Ti(OCH(CH 3 ) 2 ) 4 ) or tetrakis dimethylamido titanium (TDMAT) (Ti(N(CH 3 ) 2 ) 4 ) of the metal amide group were tested [3].…”

Section: Introductionmentioning

confidence: 99%

Elastic behaviour of titanium dioxide films on polyimide substrates studied by in situ tensile testing in a X-ray diffractometer

Bontempi¹,

Zanola²,

Gelfi³

et al. 2010

Nuclear Instruments and Methods in Physics Research Section B:

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The development of new devices has created needs of precision, conformal at the atomic level deposition of high quality thin film materials. In the last years, Atomic Layer Deposition (ALD) has received much interest as a potential deposition method for advanced thin film structures. ALD presents several advantages: the film is excellently conformal and reproducible; the film thickness depends only on the number of reaction cycles, which makes the thickness control accurate and simple; the film can be deposited onto all kind of substrates. Because of the process slowness, layer thickness is generally less than 100 nm. This makes more difficult to study all characteristics of the coating. Thin layers deposited onto bulk substrates are generally in tensile or compressive stress state, which may significantly affect physical properties and possibly compromise their lifetime. To determine the residual stress it is mandatory to know the elastic constants that may also depend on the microstructure of the layers and thus the deposition process.In this work, 2D X-ray diffraction (XRD 2 ) in combination with in situ tensile testing has been applied for the first time to measure elastic properties of TiO 2 anatase films obtained by ALD. Experimental conditions, the tensile stage being installed in a laboratory micro-diffractometer equipped with a 2D imageplate detector, and the information that can be extracted from 2D diffraction patterns will be discussed. Based on these preliminary results, synchrotron radiation beam time has been allocated to study elastic properties of these thin films. The advantages and disadvantages of the proposed laboratory equipment, with respect to the synchrotron beam lines, are discussed.

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“…Postdeposition annealing at temperatures above 800°C has to be performed to obtain pure rutile phase films. [3][4][5] However, it was shown that the growth of phase-pure rutile films at low temperatures can be stabilized by choice of an appropriate substrate. For instance, by using atomic layer deposition ͑ALD͒ and TiCl 4 and H 2 O as precursors, pure rutile films have been grown on ͑1-102͒-oriented sapphire substrates at 425°C.…”

mentioning

confidence: 99%

Growth of High-Dielectric-Constant TiO[sub 2] Films in Capacitors with RuO[sub 2] Electrodes

Fröhlich¹,

Ťapajna²,

Rosová³

et al. 2008

Electrochem. Solid-State Lett.

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Titanium dioxide thin films were grown on RuO 2 layers by atomic layer deposition. The stabilizing effect of the bottom rutile-type RuO 2 layer resulted in growth of the TiO 2 rutile films at temperatures above 275°C. Stabilization of the TiO 2 rutile phase occurred due to local epitaxial growth of the polycrystalline RuO 2 /TiO 2 /RuO 2 structure, as revealed by transmission electron microscopy. A dielectric constant as high as 155 and equivalent oxide thickness ͑EOT͒ as low as 0.5 nm were determined from the capacitance-voltage measurements for the TiO 2 films grown above 275°C. A leakage current density of 10 −3 A/cm 2 at 1 V bias voltage was obtained for the films with EOT equal to 0.5 nm.Titanium dioxide is an attractive dielectric material for microelectronic applications. Depending on its growth conditions, TiO 2 can be most easily prepared in amorphous, anatase, and/or rutile phases. The rutile phase exhibits very high dielectric constant, ranging from 90 to 170, depending on the lattice orientation. 1 Due to the high dielectric constant, the TiO 2 rutile phase is considered a promising material for capacitors in future generations of dynamic random access memories ͑DRAMs͒. 2 Unfortunately, rutile often coexists in thin films with lower dielectric constant TiO 2 phase, i.e., anatase, thereby resulting in a reduction of effective dielectric constant. Postdeposition annealing at temperatures above 800°C has to be performed to obtain pure rutile phase films. 3-5 However, it was shown that the growth of phase-pure rutile films at low temperatures can be stabilized by choice of an appropriate substrate. For instance, by using atomic layer deposition ͑ALD͒ and TiCl 4 and H 2 O as precursors, pure rutile films have been grown on ͑1-102͒-oriented sapphire substrates at 425°C. 6 Recently, Kim, et al. demonstrated ALD growth of TiO 2 rutile film at even lower temperatures on a Ru substrate pretreated by O 3 . 7 This pretreatment of the Ru electrode resulted in a thin surface film of RuO 2 with the structure compatible to that of the TiO 2 rutile phase. Using this approach, TiO 2 films with a dielectric constant of 100 were prepared at temperature as low as 250°C. 8 In a DRAM capacitor dielectric film should be combined with conductive electrodes. As the affinity of TiO 2 is about 4 eV, 9 metals with high work function should be used as electrodes to prevent excessive leakage currents due to Schottky emission. We have recently demonstrated that the work function of ruthenium oxide is more than 5 eV. 10 RuO 2 has high conductivity and crystallizes in the rutile structure with the lattice parameters ͑a RuO 2 = 0.4499 nm, c RuO 2 = 0.3107 nm͒ close to that of the TiO 2 rutile phase ͑a TiO 2 = 0.4593 nm, c TiO 2 = 0.2959 nm͒. Therefore, RuO 2 is a promising material for electrodes in capacitors with TiO 2 dielectric. In our work we have extended the approach of Kim et al. 7 to use RuO 2 as a seed layer for the TiO 2 rutile phase growth. Instead of oxidizing the Ru surface to obtain RuO 2 , we have used bottom polycrysta...

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Characteristics of TiOx films prepared by chemical vapor deposition using tetrakis-dimethyl-amido-titanium and water

Cited by 69 publications

References 17 publications

Atomic layer deposited TiO2 films in photodegradation of aqueous salicylic acid

Atomic layer deposited TiO2 films in photodegradation of aqueous salicylic acid

Elastic behaviour of titanium dioxide films on polyimide substrates studied by in situ tensile testing in a X-ray diffractometer

Growth of High-Dielectric-Constant TiO[sub 2] Films in Capacitors with RuO[sub 2] Electrodes

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