Characteristics of the nanoscale titanium film deposited by plasma enhanced chemical vapor deposition and comparison of the film properties with the film by physical vapor deposition

Abstract

Electronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor deposition

Growth of Highly Conformal TiCx Films Using Atomic Layer Deposition Technique

“…Titanium (Ti)‐based thin films, such as Ti, titanium nitride (TiN x ), and titanium carbide (TiC x ), have attracted considerable attention for applications to the fabrication of semiconductor devices, such as contact materials, glue layers, diffusion barriers, gate electrodes, etc., owing to their high electrical conductivity, chemical, mechanical, and thermal stability. With the increasing demand for shrinking dimensions of semiconductor devices, Ti‐based films need to be deposited uniformly and fill high aspect ratio (AR) structures with conformal thickness.…”