Characteristics of the laser diode with partially intermixed GaAs/AlGaAs Quantum Well

Nagai, Yutaka; Shigihara, K.; Takami, A.; Karakida, S.; Aiga, M.

doi:10.1109/islc.1992.763650

13th IEEE International Semiconductor Laser Conference

DOI: 10.1109/islc.1992.763650

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Characteristics of the laser diode with partially intermixed GaAs/AlGaAs Quantum Well

Yutaka Nagai¹,

K. Shigihara²,

A. Takami³

et al.

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“…Two types of the buffer layers, stepwise and continuous graded buffer layers, have been reported (5)(6)(7)(8). Nagai and Noguchi (6), reported that the dislocation density of GaAs0.ssSb0.14 on GaAs decreased from 1 X 107 to 2 • 108 cm -2 by changing the buffer layer from stepwise to continuous grading.…”

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Reduction of the Dislocation Density in GaAs1 − x Sb x Layer on GaAs Grown by an Improved LPE Method

Nishitani

Akita

Yamaguchi

et al. 1980

J. Electrochem. Soc.

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An improved LPE method in which the solid surface is always covered by a solution during step-graded growth of GaAsl-xSbx on GaAs substrates produces etch pit densities of 3-6 • 10 ~ cm -2. In contrast, layers grown by conventional step or continuously graded LPE have EPD of 6 X 108-2 X 10 ~ cm -2. The composition of the top layer is approximately GaAso.pSbo.1 in all cases. The reduction of EPD by the improved LPE method is attributed to limiting the nucleation of small islands to the first buffer layer, under the conditions that the grown surface is always covered by the solution subsequent to the growth of the first buffer layer.

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mentioning

confidence: 99%

Reduction of the Dislocation Density in GaAs1 − x Sb x Layer on GaAs Grown by an Improved LPE Method

Nishitani

Akita

Yamaguchi

et al. 1980

J. Electrochem. Soc.

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show abstract

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Characteristics of the laser diode with partially intermixed GaAs/AlGaAs Quantum Well

Cited by 1 publication

References 2 publications

Reduction of the Dislocation Density in GaAs1 − x Sb x Layer on GaAs Grown by an Improved LPE Method

Reduction of the Dislocation Density in GaAs1 − x Sb x Layer on GaAs Grown by an Improved LPE Method

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