Characteristics of the formation of radiation defects in silicon structures

Radiation-Stimulated Changes in the Characteristics of Surface-Barrier Al–Si–Bi Structures with Different Concentrations of Dislocations at the Crystal Surface

“…In the recent years there have appeared a significant number of publications devoted to the regularities of changes occurring to the parameters and characteristics of surface-barrier structures (SBSs) made of silicon, as well as to diode structures subjected to the magnetic and irradiation fields (Borkovska et al, 1984;Mahkamov et al, 1999;Nikolaev et al, 2003;Marchenko et al, 2010;Kalinina et al, 2010;Dolgolenko et al, 2006;Makara et al, 2008;Skvortsov et al, 2009;Mudriy et al, 2010). It is now well established (Borkovska et al, 1984;Mahkamov et al, 1999;Nikolaev et al, 2003;Marchenko et al, 2010;Kalinina et al, 2010;Dolgolenko et al, 2006) that the irradiation stimulates evolution of defect structure of crystals and so can lead to either deterioration or improvement of many characteristics of the silicon structures. Though being somewhat unusual, the latter effect really exists and is known as an 'effect of small doses'.…”