Characteristics of surface acoustic wave convolver in the monolithic metal–zinc oxide–silicon nitride–silicon dioxide–silicon structure

Abstract

The nonlinear analysis of the metal–insulator semiconductor shows that the ac currents charging the interface traps lead to large dc operating voltage and an inefficient operation of the monolithic convolvers. These interface traps are annihilated during a low temperature anneal, which utilizes hydrogen atoms implanted underneath the SiO2–Si interface. The overlay piezoelectric ZnO film in the metal–ZnO–Si3N4–SiO2–Sistructure is protected from the influx of hydrogen atoms by an interposed silicon nitride layer. Hydrogen implantation and rapid thermal annealing steps are integrated in the process sequence of realizing an efficient metal–ZnO–Si3N4–SiO2–Si monolithic surface acoustic wave convolver.

Hierarchical oxide nanostructures

“…Semiconducting oxides such as ZnO, In 2 O 3 and SnO 2 have a wide range of applications in transparent conductive films, [18][19][20] optical devices, [21][22][23] solar cells, 24 sensors, 25,26 photocatalysis, 27 transparent field effect transistors 28 and bulk acoustic wave devices. 29 Moreover, oxides nanostructure applications, such as ZnO nanowire nanolasers 15,30 and nanobelt transistors 31 have been demonstrated. We have found additional interesting novel hierarchical oxide nanostructures in our continuing study on the synthesis of oxide nanostructures.…”

Formation of ZnO Nanocones Using Wet Chemical Etching of ZnO Nanorods in an Aqueous Solution of HCl

“…On the other hand, ZnO thin films are useful for broad applications, such as surface acoustic devices, 19 varistors for surge protection 20 21 and phosphors for displays. 22 Since various chemical etching processes of ZnO are under development, the etching techniques of ZnO thin films are extremely important for fabrication of microdevices and integrated circuits.…”

Growth and Electrical Properties of Free-Standing Zinc Oxide Nanomembranes

“…Wide band gap materials, such as III-nitride, SiC and Ga 2 O 3 , have been studied for applications in optoelectronic and electronic devices. ZnO with a wide direct bandgap (3.37 eV) and a large exciton binding energy (60 meV) represents one of the most attractive wide bandgap semiconducting materials for applications related to ultraviolet (UV) optical devices, solar cells, sensors, photocatalysis, transparent field effect transistors, and acoustic wave devices . In addition, ZnO has been applied for mechanical energy-harvesting devices due to its outstanding piezoelectric property .…”