Abstract:We have successfully grown the tin oxide (SnO2) fishbone‐like nanostructures on titanium nitride (TiN)‐coated substrates by the thermal evaporation of Sn powders. X‐ray diffraction indicated that the product had the phase structure of the rutile form of SnO2. Transmission electron microscopy (TEM) revealed that the product consisted of fishbone‐like structure, with branches and sub‐branches attached to the main stem. High‐resolution TEM and selected area diffraction pattern coincidentally indicated that both b… Show more
“…Thus, the nature of the transition is tentatively ascribed to oxygen vacancies, Sn vacancies or Sn interstitials, which form a considerable number of trapped states within the band gap [20][21][22][23][24]. In this work, all the SnO 2 nanocrystalline powders heated at different temperatures and all samples were excited with a dominant emission peaks which was observed at 417 nm (blue) ascribed as luminescence centers.…”
Nanocrystalline tin oxide (SnO 2 ) powders have been synthesized by a low temperature chemical precipitation method. As-prepared and heated powders were characterized by XRD, SEM and luminescence studies. Crystallographic parameters such as crystallite size, lattice parameters and dislocation density in SnO 2 nanocrystalline powders were calculated by Rietveld analysis. The average crystallite size of 9 -43 nm was obtained for SnO 2 powders through controlled heat treatment process. The washed powders morphology was almost spherical in shape and average agglomerate crystal size was between 0.2 -0.4 μm. A Photoluminescence (PL) study was measured at an excitation wavelength of 265 nm for as-prepared and annealed powders; it showed a broad emission peak at 417 nm for all powders. The highest PL emission was attained for the powder annealed at 500℃. The synthesized nanocrystalline SnO 2 oxide semiconductor material could be suitable for making optoelectronic and sensor devices.
“…Thus, the nature of the transition is tentatively ascribed to oxygen vacancies, Sn vacancies or Sn interstitials, which form a considerable number of trapped states within the band gap [20][21][22][23][24]. In this work, all the SnO 2 nanocrystalline powders heated at different temperatures and all samples were excited with a dominant emission peaks which was observed at 417 nm (blue) ascribed as luminescence centers.…”
Nanocrystalline tin oxide (SnO 2 ) powders have been synthesized by a low temperature chemical precipitation method. As-prepared and heated powders were characterized by XRD, SEM and luminescence studies. Crystallographic parameters such as crystallite size, lattice parameters and dislocation density in SnO 2 nanocrystalline powders were calculated by Rietveld analysis. The average crystallite size of 9 -43 nm was obtained for SnO 2 powders through controlled heat treatment process. The washed powders morphology was almost spherical in shape and average agglomerate crystal size was between 0.2 -0.4 μm. A Photoluminescence (PL) study was measured at an excitation wavelength of 265 nm for as-prepared and annealed powders; it showed a broad emission peak at 417 nm for all powders. The highest PL emission was attained for the powder annealed at 500℃. The synthesized nanocrystalline SnO 2 oxide semiconductor material could be suitable for making optoelectronic and sensor devices.
“…MgO whiskers were synthesized in a conventional tube furnace with a horizontal quartz glass tube [13]. The synthetic route can be described as follows.…”
A thermal evaporation approach was developed to synthesize single-crystalline MgO whiskers on silver (Ag) layer-coated Si substrates. Magnesium diboride (MgB 2 ) and oxygen (O 2 ) were used as Mg and O precursors, respectively. The synthetic process using a thinner Ag layer facilitated the growth of 1D whiskers, and the product mainly comprises film-like structures with thicker Ag layer thickness. X-ray diffraction and selected area electron diffraction pattern revealed that the whiskers were of a single-crystalline cubic structure of MgO. We also discuss the possible mechanism by which the thickness of the underlying Ag layer affects the resultant morphology of the MgO structures.
“…The sputtering was carried out at a pressure of 8 × 10 −4 Pa in high purity argon (Ar) gas (99.999%) with dc sputtering power of about 33 W, at room temperature. The substrate was placed in a quartz tube [8] which was heated in a tube furnace at 1000…”
We synthesized SiOx nanowires with diameters of 30-140 nm, for the first time by the simple heating of the Mo-coated Si substrates. X-ray diffraction, selected area electron diffraction, and energy-dispersive X-ray spectroscopy indicated that the nanowires were in an amorphous state, comprising Si and O only. Fitting the photoluminescence spectrum with Gaussian functions revealed that the nanowires exhibited significant photoluminescence intensities near blue and green light regions. We extensively discussed the possible growth mechanism of SiOx nanowires.
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