Characteristics of SiOx thin films deposited by atmospheric pressure chemical vapor deposition as a function of HMDS/O2 flow rate

Gil, Elly; Park, J.B.; Oh, Jong Sik; Yeom, Geun‐Young

doi:10.1016/j.tsf.2010.03.170

Cited by 21 publications

(10 citation statements)

References 18 publications

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“…Figure 1 presents the ATR‐FTIR spectra for the films showing the variation of the film composition as a function of HMDSO concentration (0.4 and 4.0 g · h −1 ) with the constant process parameters. It is well known in low or high pressure plasma CVD that the ratio between the oxidizer (molecular oxygen) and organosilicon precursor content in the gas mixture and the energy delivered per precursor molecule are important parameters, altering the film composition from inorganic quartz silica‐like to a chemical structure close to organic silicones 5–6, 9, 22, 42, 43. The main absorption bands in the 1 000–1 150 cm −1 region can be assigned to the asymmetric stretching of the SiOSi group 44, 45.…”

Section: Resultsmentioning

confidence: 99%

Morphological Description of Ultra‐Smooth Organo‐Silicone Layers Synthesized Using Atmospheric Pressure Dielectric Barrier Discharge Assisted PECVD

Premkumar¹,

Starostin²,

Vries³

et al. 2013

Plasma Processes & Polymers

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The SiO x C y H z layers synthesized by means of the atmospheric pressure glow-like DBD assisted PECVD technology show remarkable planarizing film properties, observed for the first time. The films were deposited in a roll-to-roll mode on large area polymeric webs using HMDSO and air as the precursor and oxidiser. FTIR analysis show the carbon content in the SiO x films is strongly correlated with the precursor flow rate resulting in SiO 2 -like layers with negligible carbon content at lower flow values (0.4 g/h), while at higher flow rates carbon rich SiO x C y H z films were obtained. Detailed AFM surface profile analysis show that the SiO x C y H z films smoothen out the global and local surface structures of the polymer comprising a reduction in rms surface roughness (0.99 AE 0.11 nm) and increase of roughness exponent (a ¼ 0.97 AE 0.02) compared to that of PEN polymer. These ultra-smooth organic layers together with the smooth inorganic SiO x layers (1.75 AE 0.12 nm), exhibiting roughness comparable to the polymer (1.50 AE 0.07 nm) at lower precursor input, provide an efficient route to fabricate multilayer hybrid structures in a single chamber synthesis.

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Section: Resultsmentioning

confidence: 99%

Morphological Description of Ultra‐Smooth Organo‐Silicone Layers Synthesized Using Atmospheric Pressure Dielectric Barrier Discharge Assisted PECVD

Premkumar¹,

Starostin²,

Vries³

et al. 2013

Plasma Processes & Polymers

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“…For process monitoring, emission spectroscopy is certainly a solution as correlation between plasma emission and thin film chemistry have been observed 19, 67, 162…”

Section: Ap‐pecvd Reactorsmentioning

confidence: 99%

Atmospheric Pressure Low Temperature Direct Plasma Technology: Status and Challenges for Thin Film Deposition

Massines

Sarra-Bournet

Fanelli

et al. 2012

Plasma Processes & Polymers

306

327

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Over the last ten years, expansion of atmospheric pressure plasma solutions for surface treatment of materials has been remarkable, however direct plasma technology for thin film deposition needs still great effort. The objective of this paper is to establish the state of the art on scientific and technologic locks, which have to be opened to consider direct atmospheric pressure plasma‐enhanced chemical vapor deposition (AP‐PECVD) a viable option for industrial application. Basic scientific principles to understand and optimize an AP‐PECVD process are summarized. Laboratory reactor configurations are reviewed. Reference points for the design and use of AP‐PECVD reactors according to the desired thin film properties are given. Finally, solutions to avoid powder formation and to increase the thin film growth rate are discussed.

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“…In Table 1, we list a set of works (Ref [53][54][55][56][57][58][59][60][61][62][63][64][65][66][67][68][69][70][71][72] showing the various possibilities investigated to deposit thin films by low power sources. The common operational mode of atmospheric pressure DBD is filamentary (Ref 54,(57)(58)(59)(60)(61)(62)(63)(64)(65)(66)(67)71), resulting in strong spatial nonuniformity of plasma chemistry that can alter the quality of the films. On the contrary, glow DBD modes (Ref 53,55,56,(68)(69)(70)72), sometimes, referred to as low current atmospheric pressure Townsend-like discharge or high current atmospheric pressure glow-like discharge, are expected to give high quality films.…”

Section: Low Power Sourcesmentioning

confidence: 99%

Nonequilibrium Atmospheric Plasma Deposition

2011

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Characteristics of SiOx thin films deposited by atmospheric pressure chemical vapor deposition as a function of HMDS/O2 flow rate

Cited by 21 publications

References 18 publications

Morphological Description of Ultra‐Smooth Organo‐Silicone Layers Synthesized Using Atmospheric Pressure Dielectric Barrier Discharge Assisted PECVD

Morphological Description of Ultra‐Smooth Organo‐Silicone Layers Synthesized Using Atmospheric Pressure Dielectric Barrier Discharge Assisted PECVD

Atmospheric Pressure Low Temperature Direct Plasma Technology: Status and Challenges for Thin Film Deposition

Nonequilibrium Atmospheric Plasma Deposition

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