Characteristics of silicon removal by fine focused gallium ion beam

Yamaguchi, Hiroshi; Shimase, Akira; Haraichi, Satoshi; Miyauchi, Takeshi

doi:10.1116/1.583294

Cited by 78 publications

(28 citation statements)

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“…During irradiation, redeposition is enhanced by developing side walls, leading to enhanced near-surface [Ga] and [Si], while N likely escapes as N 2 . 31 Similar redeposition effects were reported by Yamaguchi et al 32 for Ga FIB implantation into Si. Thus, for the "multi-E unpatterned" samples with higher ratios of the scanned to side wall area, redeposition is less significant, leading to a higher [N], thereby enabling the nucleation of GaN and SiN x NCs.…”

supporting

confidence: 78%

Formation mechanisms of embedded nanocrystals in SiNx

Canniff

Wood

Goldman

2013

Applied Physics Letters

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We have investigated the formation of embedded nanocrystals (NCs) in SiNx using Ga+ focused-ion beam irradiation of SiNx membranes, followed by rapid thermal annealing (RTA). During irradiation, redeposition is enhanced by developing side walls, leading to enhanced near-surface [Ga] and [Si]. Subsequent RTA leads to the formation of Si and Ga NCs embedded in SiNx. When the ratio of the irradiated area to the sidewall area is increased, redeposition is limited, and SiNx and GaN NCs are also apparent. We discuss the effect of limited redeposition on NC formation and the catalytic effect of Ga on Si NC nucleation and growth.

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supporting

confidence: 78%

Formation mechanisms of embedded nanocrystals in SiNx

Canniff

Wood

Goldman

2013

Applied Physics Letters

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“…7.10b. A similar phenomenon has also been observed by Yamaguchi et al [53]. A longer dwell time not only leads to a boost in redeposition but also results in a higher local sputter yield.…”

Section: Scanning Passes and Dwell Timesupporting

confidence: 59%

“…The iteration of each scanning pattern is called a scanning pass. The multi-pass scanning process is helpful in forming a uniform bottom surface [53]. Figure 7.10 shows a comparison of two micro-grooves which were fabricated on a silicon substrate (100) surface by FIB machining using a single scanning pass method and a multi-pass scanning method.…”

Section: Scanning Passes and Dwell Timementioning

confidence: 99%

Deterministic Fabrication of Micro- and Nanostructures by Focused Ion Beam

Sun

Luo

2013

Lecture Notes in Nanoscale Science and Technology

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Focused ion beam (FIB) machining is an ideal technique for both micro-and nanofabrication. This chapter describes a deterministic fabrication approach to accurately obtain micro-and nanostructures. It starts with a detailed introduction of FIB machining mechanism, followed by a surface topography simulation method and a divergence compensation method. The effectiveness of this fabrication approach has been fully demonstrated through a number of experiments which show that the surface topography of the machined material can be precisely predicted; the divergence compensation method can reduce the machining error, and the machined surface form accuracy can be dramatically improved. Combining with other techniques, some hybrid manufacturing techniques based on FIB machining are also introduced.

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“…Redeposition of sputtered material can be minimized by repetitive passes of scanning instead of a single scanning pass during FIB milling. In repetitive-pass scanning of the substrate material, redeposited material is less, and that redeposited material is removed in the next scanning cycle of the ion beam over the substrate [39]. The effect of redeposition has been considered here in terms of the ratio of redeposition per unit time to scanning velocity of the ion beam in the x direction.…”

Section: Proposed Numerical Modelmentioning

confidence: 99%

An accurate and efficient control over the present numerical model of depth of sputtering in focused ion beam milling

Bhavsar

Aravindan

Rao

2009

Proceedings of the Institution of Mechanical Engineers, Part N:

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In many applications, such as fabrication of microtools, microsurgical instruments, microgears, and so on, material must be removed precisely with a focused ion beam (FIB) milling process to generate a specified geometry on substrate material. A mathematical model is available to calculate depth of sputtering at each point on substrate material in order to generate a specified geometry, but the results of the existing model deviates from experimental data. In the current paper, normalized pixel spacing and ratio of redeposition to beam velocity are the two parameters that have been considered in calculation of depth of sputtering during the FIB milling process. A proposed mathematical model incorporating the effect of redeposition has been simulated for parabolic and rectangular trench profiles, and it has been proven to be better than the existing model through comparison with experimental data of parabolic and rectangular geometry on silicon material. In addition, efforts have been made to reduce the amount of numerical calculation in the simulation process by utilizing a Gaussian mask in the existing model instead of the usual Gaussian intensity function. The Gaussian mask prevents the need for repeated calculation of Gaussian intensity function in the mathematical model of depth of sputtering, and in turn reduces the time of computation.

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Characteristics of silicon removal by fine focused gallium ion beam

Cited by 78 publications

References 0 publications

Formation mechanisms of embedded nanocrystals in SiNx

Formation mechanisms of embedded nanocrystals in SiNx

Deterministic Fabrication of Micro- and Nanostructures by Focused Ion Beam

An accurate and efficient control over the present numerical model of depth of sputtering in focused ion beam milling

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