Characteristics of semiconductor devices at cryogenic temperatures

Jackson, William D.; Mazzoni, Omar S.; Schempp, E.

doi:10.1109/iecec.1996.553779

Cited by 5 publications

(5 citation statements)

References 4 publications

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“…As shown by Jackson, the current rise time and fall times for APT 10026DN MOSFET are 19 ns and 14 ns, respectively at room temperature (RT). Thus for a 60-kVA converter operating into a resistive load with f =10 kHz, at 750 V, 82 A rms , Jackson [38] At 77 K, the values for rise and fall times become shorter by a factor of 2-5, reducing the switching losses to 1-2 W [38]. Another important finding is the improvement in rise and fall times, particularly due to the driver circuit [39].…”

Section: Device Switching Lossmentioning

confidence: 96%

“…At this point, the invention of power devices that operate at cryogenic temperatures is still in an early stage. More research has been focused on examining the behavior of existing ambient power electronics device at low temperature [37][38][39][40][41][42][43][44][45]. The inventory of examined devices divides into minority carrier groups (SCRs, GTOs and power transistors), majority carrier MOSFETs, and the IGBT-MCT hybrids.…”

Section: Cryogenic Power Devicementioning

confidence: 99%

“…This unique feature of cryogenic operation for power MOSFETs is in sharp contrast to GTOs, which at ambient temperature, have a threshold voltage drop of about 1.0-1.5 V; this increases with decreasing temperature to the value at which the device ceases to switch. Moreover, no improvements are obtained by placing devices in parallel, and the overall dissipation cannot be reduced [38].…”

Section: Device Conduction Lossesmentioning

confidence: 99%

“…Thus the switching loss can be further decreased by improved gate drive circuit design. The per-switch switching losses can be as low as 0.2-0.4W at 77 K [38].…”

Section: Device Switching Lossmentioning

confidence: 99%

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Review of the State-of-the-Art in Power Electronics Suitable for 10-KW Military Power Systems

Staunton¹

2003

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Section: Device Switching Lossmentioning

confidence: 96%

Section: Cryogenic Power Devicementioning

confidence: 99%

Section: Device Conduction Lossesmentioning

confidence: 99%

“…Thus the switching loss can be further decreased by improved gate drive circuit design. The per-switch switching losses can be as low as 0.2-0.4W at 77 K [38].…”

Section: Device Switching Lossmentioning

confidence: 99%

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Review of the State-of-the-Art in Power Electronics Suitable for 10-KW Military Power Systems

Staunton¹

2003

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“…However, there are also challenges that need to be addressed. Jackson et al argued that it was not likely that existing devices were truly optimized for cryogenic environment although it was fortunate that they were both structurally and electrically compatible; on the other hand, developments of optimized cryogenic devices were required [34].…”

Section: Challengesmentioning

confidence: 99%

Improving Performance of Cryogenic Power Electronics

Haldar

Efstathiadis

et al. 2005

IEEE Trans. Appl. Supercond.

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Cryogenic Power Electronics (CPE) provides promising benefits for power conditioning system compared to their room-temperature counterparts in terms of reduced size and weight (increased power density), improved efficiency, improved switching speed, and improved reliability. Active devices such as semiconductor switches can exhibit performance improvements such as reduced conduction losses, higher switching speed, reduced diode reverse recovery, greater device gain, higher over-current capability, and increased power levels. Passive devices (inductors, capacitors, interconnects) will also improve by the lowered resistance of their constituent metal conductors or the use of superconductors. This paper aims to review the present status of CPE and to provide an outlook on emerging device technologies that are gaining in interest. Advanced power electronic packaging/interconnect methods that adapt well to cryogenics and help further improve system performance is discussed. Given improved and known device and interconnect properties, the system designer can develop the best circuit topologies for maximum CPE system performance.

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Cryoelectronics — An experimental examination of the behaviour of power electronic devices at low temperatures

Hawley

Gower

2005

Proceedings of the Twentieth International Cryogenic Engineering Conference (ICEC20)

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Characteristics of semiconductor devices at cryogenic temperatures

Cited by 5 publications

References 4 publications

Review of the State-of-the-Art in Power Electronics Suitable for 10-KW Military Power Systems

Review of the State-of-the-Art in Power Electronics Suitable for 10-KW Military Power Systems

Improving Performance of Cryogenic Power Electronics

Cryoelectronics — An experimental examination of the behaviour of power electronic devices at low temperatures

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