Characteristics of Selective Deposition of Metal Organic Films Using Focused Ion Beams

Gamo, Kenji; Takakura, Nobuyuki; Takehara, Daisuke; Namba, Susumu

doi:10.7567/ssdm.1984.a-2-5

Cited by 3 publications

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Materials that are commonly available for IB deposition in a FIB are Pt (Puretz & Swanson, 1992; Tao et al, 1990), C (Van Leer et al, 2009), and W (Gamo et al, 1986; Xu et al, 1989). Other metals such as Au (Blauner et al, 1989; Ro et al, 1987), Pd (Gross et al, 1986), Al (Gamo et al, 1984), Cu (Della Ratta et al, 1993), Fe (Furuya, 2008), Ta (Gamo et al, 1986), as well as insulators, e.g. SiO 2 (Komano et al, 1989), and tetraethoxysilane (TEOS) (Young & Puretz, 1995) are also used.…”

Section: Introductionmentioning

confidence: 99%

Ion‐beam deposited platinum as electrical contacting material in operando electron microscopy experiments at elevated temperatures

Simonsen¹,

Ma²,

Mariegaard³

et al. 2023

Microscopy Res & Technique

View full text Add to dashboard Cite

Establishing a stable and well conducting contacting material is critical for operando electron microscopy experiments of electrical and electrochemical devices at elevated temperatures. In this contribution, the nanostructure and electrical conductivity of ion beam deposited Pt are investigated both in vacuum and in oxygen as a function of temperature. Its microstructure is relatively stable up to a temperature of approx. 800°C and up to an applied current density of approx. 100 kA/cm2. Its conductivity increases with temperature, attributed to densification, with changes in the hydrocarbon matrix being less important. Recommendations are provided with respect to the Pt deposition parameters in terms of maximizing stability and minimizing electrical resistance. Research Highlights It is feasible to use ion beam deposited Pt as electrical contacting material in operando electron microscopy. The deposited Pt is relatively stable up to 800°C and approx. 100 kA/cm2. The resistivity can be reduced by increasing the applied ion current during deposition and by thermal annealing at a temperature of 500°C in a few mbar of oxygen.

show abstract