Characteristics of Schottky contacts to ZnO:N layers grown by molecular-beam epitaxy

Oh, D. C.; Kim, J. J.; Makino, Hisao; Hanada, Takashi; Cho, M. W.; Yao, Takafumi; Ko, Hang-Ju

doi:10.1063/1.1854191

Cited by 40 publications

(27 citation statements)

References 19 publications

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“…Even though hydrogen peroxide passivates the surface of ZnO, it has been previously demonstrated that high temperature annealing causes an increase in surface conduction even for the peroxide treated samples from Hall effect studies [1]. This surface conduction provides an easy path for current flow even when the contact is reverse biased resulting in large currents flowing under reverse bias for high temperature annealed contacts as was also explained by Oh et al [19]. The forward IV characteristics of the contacts indicate two distinct regions.…”

Section: Resultsmentioning

confidence: 63%

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Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements

Mtangi

Auret

Chawanda

et al. 2012

Materials Science and Engineering: B

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The effects of ZnO annealing have for the first time been investigated on the rectification behaviour of highly rectifying Pd Schottky contacts deposited on ZnO using the current-voltage (IV) and capacitance-voltage (CV) measurement techniques. IV results reveal a decrease in the contact quality with increasing annealing temperature as confirmed by a decrease in the zero bias barrier height and an increase in the reverse current measured at -1.5 V. An average barrier height of (0.77 ± 0.02) eV has been calculated by assuming pure thermionic emission for the as-

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Section: Resultsmentioning

confidence: 63%

“…The series resistance has been observed to decrease with increase in annealing temperature as shown in Table 1. The lower region of the curves has been modelled by assuming pure thermionic emission, where the current flowing through the metal-semiconductor contact can be estimated by [19],…”

Section: Resultsmentioning

confidence: 99%

Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements

Mtangi

Auret

Chawanda

et al. 2012

Materials Science and Engineering: B

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“…www.pss-c.com However, the studies for the electrical properties of ZnO/GaN heterointerface and the photoresponsivity of thin film ZnO are still lack [6,7]. These are ascribed to the conducting layers at ZnO surface that hampers the fabrication of good Schottky contact to ZnO and restricts the electrical characterization of interface or bulk.…”

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confidence: 94%

“…Its value decreases with increasing a measurement frequency. The observed variation of capacitance is ascribed to the dispersion effect due to trap centers [7,12]. The capacitance of the ZnO layer, calculated from dielectric constant (= 9.2 o ε ) and thickness (= 1010 nm), is 0.063 nF.…”

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confidence: 98%

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Electrical properties of ZnO/GaN heterostructures and photoresponsivity of ZnO layers

Suzuki

Makino

et al. 2006

Phys. Status Solidi (c)

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We report on the electrical properties of ZnO/GaN heterostructures and the photoresponsivity of ZnO Schottky barrier diodes for the applications of heterojunction transistors and ultraviolet photodetectors, respectivly. ZnO/GaN heterostructures exhibit a large plateau region of 6.5 V in 10 kHz capacitance-voltage curves. Moreover, it is found that a high electron density of ~ 10 18 cm -3 is accumulated at the heterointerface in depth profile. ZnO Schottky barrier diodes show a rapid increase of photocurrent of ~ 10 2 A at the long-wavelength cutoff of 390 nm with maitaining stable diode characteristics. And, it is observed that ZnO Schottky barrier diodes respond to photosignal within 1 ~ 2 msec with a time constant of 0.35 msec. ZnO/GaN heterostructures are very attractive as heterojunction devices, because a large bandgap discontinuity at heterointerface is expected. Johnson et al. have reported that the valence band of GaN is estimated to be located at 0.6 eV above the valence band of ZnO based on the electron affinity rule [2]. Hong et al. have by using X-ray photoelectron spectroscopy observed that the ZnO/GaN heterointerface is made up of the type II band alignment with the valence-band offset of 0.8 eV [3]. Moreover, ZnO/GaN heterostructures also have attractive merits in the aspect of crystal growth. GaN is good choice for a template for ZnO growth, because ZnO is a closely lattice-matched material to GaN with a lattice mismatch of 1.8 % [4], which is ten times smaller than Al 2 O 3 that is normally used as a substrate for ZnO. In the case that GaN with Ga polarity is used as a template, the polarity of ZnO can also be easily controlled by changing preexposure conditions [5].ZnO is also very attractive as UV photodetecting devices, because its bandgap spans the spectral region ranging from 2.5 eV (496 nm) to 10.6 eV (124 nm) by alloying Oxide materials such as CdO, MgO, and BeO. Moreover, ZnO is more strong for radiation damage at the range of very short wavelength (< 200 nm) than Si and GaN, due to large radiation hardness [1].

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Fundamental Properties of ZnO

Collins

Hauenstein

2011

Zinc Oxide Materials for Electronic and Optoelectronic Device Applications

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Characteristics of Schottky contacts to ZnO:N layers grown by molecular-beam epitaxy

Cited by 40 publications

References 19 publications

Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements

Thermal annealing behaviour of Pd Schottky contacts on melt-grown single crystal ZnO studied by IV and CV measurements

Electrical properties of ZnO/GaN heterostructures and photoresponsivity of ZnO layers

Fundamental Properties of ZnO

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