Characteristics of Rhombohedral (3R) Structure of α-In2Se3 Nanosheets by Mechanical Exfoliation

Seo, Dong Hyun; Kim, Ju Won; Seong, Jihwan; Lee, Hyo-Chang; Kim, Sang Il; Kim, TaeWan

doi:10.1007/s13391-023-00439-y

Cited by 2 publications

(1 citation statement)

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“…The ferroelectricity of 2D materials traced back to the 1960s, with reports in 1966 on group IV semiconducting monochalcogenides [196], and in 1986 on transition metal thio/selenophosphate [197], marking the inception of research on vdW materials. Subsequently, various methods have attempted to scale down the thickness of 2D materials, like molecular beam epitaxy (MBE) and mechanical exfoliation serving as bases for observing ferroelectricity [198,199]. Among these materials, CIPS has emerged as a promising candidate as a ferroelectric layer at room temperature.…”

Section: Two-dimensional Materials-based Ftjsmentioning

confidence: 99%

Ferroelectric tunnel junctions: promise, achievements and challenges

Park,

Lee,

Park

et al. 2024

J. Phys. D: Appl. Phys.

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Ferroelectric tunnel junctions (FTJs) have been the subject of ongoing research interest due to its fast operation based on the spontaneous polarization direction of ultrathin ferroelectrics and its simple two-terminal structure. Due to the advantages of FTJs, such as non-destructive readout, fast operation speed, low energy consumption, and high-density integration, they have recently been considered a promising candidate for non-volatile next-generation memory. These characteristics are essential to meet the increasing demand for high-performance memory in modern computing systems. In this review, we explore the basic principles and structures of FTJs and clarify the elements necessary for the successful fabrication and operation of FTJs. Then, we focus on the recent progress in perovskite oxide, fluorite, 2-dimensional van der Waals, and polymer-based FTJs and discuss ferroelectric materials expected to be available for FTJs use in the future. We highlight various functional device applications, including non-volatile memories, crossbar arrays, and synapses, utilizing the advantageous properties of ferroelectrics. Lastly, we address the challenges that FTJ devices currently face and propose a direction for moving forward.

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Section: Two-dimensional Materials-based Ftjsmentioning

confidence: 99%

Ferroelectric tunnel junctions: promise, achievements and challenges

Park,

Lee,

Park

et al. 2024

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

2D materials-based crossbar array for neuromorphic computing hardware

Lee,

Park,

Kim

et al. 2024

Neuromorph. Comput. Eng.

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The growing demand for artificial intelligence has faced challenges for traditional computing architectures. As a result, neuromorphic computing systems have emerged as possible candidates for next-generation computing systems. Two-dimensional (2D) materials-based neuromorphic devices that emulate biological synapses and neurons play a key role in neuromorphic computing hardware due to their unique properties such as high strength, thermal conductivity, and flexibility. Although several studies have shown the simulations of individual devices, experimental implementation of large-scale crossbar arrays is still unclear. In this review, we explore the working principles and mechanisms of memristive devices. Then, we overview the development of neuromorphic devices based on 2D materials including transition metal dichalcogenides, graphene, hexagonal boron nitride, and layered halide perovskites. We also highlight the requirement and recent progress for building crossbar arrays by utilizing the advantageous properties of 2D materials. Lastly, we address the challenges that hardware implementation of neuromorphic computing systems currently face and propose a path towards system-level applications of neuromorphic computing.

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Characteristics of Rhombohedral (3R) Structure of α-In2Se3 Nanosheets by Mechanical Exfoliation

Cited by 2 publications

References 20 publications

Ferroelectric tunnel junctions: promise, achievements and challenges

Ferroelectric tunnel junctions: promise, achievements and challenges

2D materials-based crossbar array for neuromorphic computing hardware

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