Characteristics of poly(alkyl silsesquioxane) thin films prepared from chemically linked alkyl units

Cham, Bong Jun; Kim, Baekjin; Jung, Bumsuk

doi:10.1016/j.jnoncrysol.2006.08.039

Cited by 5 publications

(3 citation statements)

References 28 publications

(34 reference statements)

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“…In addition, signals appear at − 33, − 44, − 58 and − 68 ppm in the spectrum of C 12 SiON. The signals observed at − 58 and − 68 ppm are attributable to C Si (OH)(OSi) 2 [T 2 ] and C Si (OSi) 3 [T 3 ] environments, respectively 21. The signals observed at − 33 and − 44 ppm, moreover, are assignable to the C Si N 2 O and C Si N 2 O1, 22 environments, respectively.…”

Section: Resultsmentioning

confidence: 99%

Formation of SiON networks from silsesquiazanes

Yokota¹,

Imanari²,

Sugahara³

2010

Applied Organom Chemis

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Section: Resultsmentioning

confidence: 99%

Formation of SiON networks from silsesquiazanes

Yokota¹,

Imanari²,

Sugahara³

2010

Applied Organom Chemis

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“…1. Their assignments, based on our previous works 14,17,29,30 and on the literature, 5,[26][27][28][31][32][33][34][35][36] are reported in Table 1. These spectra are representative of the NMR spectra obtained in this study.…”

Section: Chemical Shift Assignmentmentioning

confidence: 99%

Spin-coated and PECVD low dielectric constant porous organosilicate films studied by 1D and 2D solid-state NMR

Gerbaud

Hediger

Bardet

et al. 2009

Phys. Chem. Chem. Phys.

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In the research field of the sub-65 nm semiconductor industry, organosilicate SiOCH films with low dielectric constant (k < 2.4) need to be developed in order to improve the performance of integrated circuits [International Roadmap for Semiconductors (ITRS), San Jose, CA, 2004]. One way to produce SiOCH films of low dielectric constant is to introduce pores into the film. This is usually obtained in two steps. Firstly, co-deposition of a matrix precursor, with a sacrificial organic porogen, either by plasma enhanced chemical vapor deposition (PECVD) or spin-coating. Secondly, application of a specific thermal treatment to remove the porogen and create the porosity. This last step can be improved by adding to the thermal process a super-critical CO(2) treatment, an UV irradiation or an electronic bombardment (e-beam). In this study, the two deposition processes as well as the various treatments applied to eliminate the porogens were evaluated and compared using high-resolution solid-state NMR. For this purpose, hybrid (containing porogens) and porous films were extensively characterized on the basis of their (1)H, (13)C and (29)Si high-resolution NMR spectra. Information was obtained concerning the crosslinking of the Si skeleton. Spectral features could be correlated to the processes used. Isotropic chemical shift analyses and 2D correlation NMR experiments were used to show the existence and nature of the interactions between the matrix precursor and the organic porogen.

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“…To address the trade-off between dielectric constant and mechanical strength, the microstructures of low-k precursors should be engineered. Therefore, the bridged organosilicate precursor 1,2-bis(triethoxysilyl)ethane (BTEE) was employed to enhance the film toughness, as reported by Cham et al 14 Accordingly, porous ultralow-k films with adequate mechanical strength were achieved. Further, the chemical structure and physical properties were investigated as a function of treatment temperature.…”

Section: Introductionmentioning

confidence: 99%

Preparation and Characterization of Ultralow-Dielectric-Constant Porous SiCOH Thin Films Using 1,2-Bis(triethoxysilyl)ethane, Triethoxymethylsilane, and a Copolymer Template

Qian

Zhang

2011

Journal of Elec Materi

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Ultralow-dielectric-constant (k) porous SiCOH films have been prepared using 1,2-bis(triethoxysilyl)ethane, triethoxymethylsilane, and a poly(ethylene oxide)-poly(propylene oxide)-poly(ethylene oxide) triblock copolymer template by means of spin-coating. The resulting films were characterized by cross-section scanning electron microscopy, small-angle x-ray diffraction, atomic force microscopy, Fourier-transform infrared spectroscopy, nanomechanical testing, and electrical measurements. Thermal treatment at 350°C for 2 h resulted in the formation of ultralow-k films with k of $2.0, leakage current density of 3 9 10 À8 A/cm 2 at 1 MV/cm, reduced modulus (E r ) of $4.05 GPa, and hardness (H) of $0.32 GPa. After annealing between 400°C and 500°C for 30 min, the resulting films showed fluctuant k values of 1.85 to 2.22 and leakage current densities of 3.7 9 10 À7 A/cm 2 to 3 9 10 À8 A/cm 2 at 0.8 MV/cm, likely due to the change of the film microstructure. Compared with 350°C annealing, higher-temperature annealing can improve the mechanical strength of the ultralow-k film, i.e., E r % 5 GPa and H % 0.56 GPa after 500°C annealing.

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Characteristics of poly(alkyl silsesquioxane) thin films prepared from chemically linked alkyl units

Cited by 5 publications

References 28 publications

Formation of SiON networks from silsesquiazanes

Formation of SiON networks from silsesquiazanes

Spin-coated and PECVD low dielectric constant porous organosilicate films studied by 1D and 2D solid-state NMR

Preparation and Characterization of Ultralow-Dielectric-Constant Porous SiCOH Thin Films Using 1,2-Bis(triethoxysilyl)ethane, Triethoxymethylsilane, and a Copolymer Template

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