Abstract:Characteristic features of photoconductivity in AsÜSb½ Se Ü and AsÜSb½¼Se ¼ Ü bulk glass systems have been measured and reported. Both a.c and d.c techniques have been employed for the measurements. The temperature dependence of photoconductivity has been analysed in terms of the ABFH model and both systems are found to exhibit type I photoconductivity. Photoconductivity shows a clear change in slope corresponding to the stoichiometric composition in both the systems. The composition dependence of photoconduct… Show more
“…The relation between ln(τ) and ln(g) shows that the exponent ν lies between 0.54 and 1, which is an indication for a continuous distribution of traps in the energy gap. 26 …”
Section: Resultsmentioning
confidence: 99%
“…The value of ν at different light intensities lies between 0.5 and 1. A value of ν lying between 0.54 and 1 is an indication for a continuous distribution of traps in the energy gap 6 Temperature dependence of lifetime for TlGaS 2 single crystals. 7 Applied voltage dependence of lifetime for TlGaS 2 single crystals. 8 Light intensity dependence of lifetime for TlGaS 2 single crystals. 9 Light intensity dependence of the PRT for TlGaS 2 single crystals. …”
Section: Resultsmentioning
confidence: 99%
“…High values of both the applied voltage and the light intensity reduce the value of the carrier lifetime, which could be due to the increase in the carrier velocity and in the trap centers. The relation between ln(τ) and ln( g ) shows that the exponent ν lies between 0.54 and 1, which is an indication for a continuous distribution of traps in the energy gap …”
The photoconductivity (PC) of TlGaS2 layered single crystals was investigated in the 77−300 K temperature,
1000−2500 lx excitation intensity, 10−25 V applied voltage, and 415−535 nm wavelength ranges. Both the
alternating current photoconductivity (ac-PC) and the spectral distribution of the photocurrent were studied
at different values of light intensity, applied voltage, and temperature. Dependencies of the carrier lifetime
on light intensity, applied voltage, and temperature have been investigated as a result of the ac-PC and direct
current photoconductivity (dc-PC) measurements. The temperature dependence of the energy gap width was
described as a result of studying the dc-PC. The values of the photoconductivity response time, which are
reported from the light intensity dependence of ac-PC, presents that there is a continuous distribution of traps
in the energy gap.
“…The relation between ln(τ) and ln(g) shows that the exponent ν lies between 0.54 and 1, which is an indication for a continuous distribution of traps in the energy gap. 26 …”
Section: Resultsmentioning
confidence: 99%
“…The value of ν at different light intensities lies between 0.5 and 1. A value of ν lying between 0.54 and 1 is an indication for a continuous distribution of traps in the energy gap 6 Temperature dependence of lifetime for TlGaS 2 single crystals. 7 Applied voltage dependence of lifetime for TlGaS 2 single crystals. 8 Light intensity dependence of lifetime for TlGaS 2 single crystals. 9 Light intensity dependence of the PRT for TlGaS 2 single crystals. …”
Section: Resultsmentioning
confidence: 99%
“…High values of both the applied voltage and the light intensity reduce the value of the carrier lifetime, which could be due to the increase in the carrier velocity and in the trap centers. The relation between ln(τ) and ln( g ) shows that the exponent ν lies between 0.54 and 1, which is an indication for a continuous distribution of traps in the energy gap …”
The photoconductivity (PC) of TlGaS2 layered single crystals was investigated in the 77−300 K temperature,
1000−2500 lx excitation intensity, 10−25 V applied voltage, and 415−535 nm wavelength ranges. Both the
alternating current photoconductivity (ac-PC) and the spectral distribution of the photocurrent were studied
at different values of light intensity, applied voltage, and temperature. Dependencies of the carrier lifetime
on light intensity, applied voltage, and temperature have been investigated as a result of the ac-PC and direct
current photoconductivity (dc-PC) measurements. The temperature dependence of the energy gap width was
described as a result of studying the dc-PC. The values of the photoconductivity response time, which are
reported from the light intensity dependence of ac-PC, presents that there is a continuous distribution of traps
in the energy gap.
“…The addition of antimony to chalcogenide glasses is generally accompanied by a marked change in their electrical and photoelectrical properties. To this issue a series of works are devoted [7][8][9][10][11].…”
Research into the phase change transition (PCT) from amorphous to crystalline state in chalcogenide glass semiconductors is often more associated with large-scale samples. The authors present a micro-scale structural model of the Sb/Se thin films. They have also extended the investigations of photo-and thermostimulated inter-diffusion and PCT effects between two adjacent layers. The results show that the optical and electrical characteristics of such a film change simultaneously. It has been found that the electric conductivity of the films increases 3 times during a PCT process.
“…All these changes are very significant for various applications including medical and pharmaceutical uses, micro-electro-mechanical (MEMS) devices and imaging. Photoconductivity in various materials has been an area of significant interest [7]- [9]. Investigators have reported various aspects of the phenomenon.…”
Results of an experimental investigation are reported on photoconductive response of Pyrex, Quartz and Vycor. This research was conducted as a feasibility study for developing a new gamma dose measurement device based on the principle of photoconductivity. However, data collected in this study are equally valuable for various other applications where these materials are to be used in high radiation field. Our experiments and analyzes indicated that the selected dosimeter materials exhibit photoconductivity and respond to changes in gamma dose rate within a useful range. Pyrex glass suffered radiation damage at a relatively high dose rate of 0.25 Gys 1 . Quartz and Vycor exhibit significant advantages over Pyrex as dosimeter material. However, their limit of operability was found to be at a dose rate of approximately 28 mGy s 1 . Vycor dosimeter in particular appears promising for gamma measurement applications. From an endurance point of view, Quartz appears to be the most suitable material for applications in high dose rate conditions, in that photo-currents in Quartz were observed to be minimum.
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