Characteristics of PHEMTs and MSM photodetectors simultaneously fabricated on same epitaxial wafer with In_0.75Ga_0.25As/InGaAs channel layer

Abstract

InP‐based high electron mobility transistors with a pseudomorphically strained InAs channel (InAs‐PHEMTs) have been receiving much attention because of their excellent high‐frequency performance. Metal‐semiconductor‐metal photodetectors (MSM‐PDs) are very attractive as high speed optical receivers because they can be monolithically integrated with InAs‐PHEMTs on the same epitaxial wafer for developing high‐speed optoelectronic integrated circuits.In this study, InAs‐PHEMTs and PMSM‐PDs were fabricated simultaneously on the same epitaxial wafer with a channel layer composed of strained In0.75Ga0.25As/In0.53Ga0.47As. We demonstrated a current cut‐off frequency as high as 151 GHz for PHEMTs with a gate length of 0.1 μm and an optical response time as low as 18 ps for the PMSM‐PDs with a line and space width of 0.2 and 0.6 μm, respectively (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)