Characteristics of O(<sup>3</sup>P) Density in O<sub>2</sub>and Kr Gas Mixture Remote Plasma Oxidation of Silicon Measured by Two-Photon Absorption Laser-Induced Fluorescence

Kamioka, I.; Kurihara, Kazuaki

doi:10.1143/jjap.42.l1472

Cited by 4 publications

(6 citation statements)

References 3 publications

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“…Kamioka et al investigated the relation between surface O( 3 P) density and SiO 2 growth rate. 23) Their results indicated that the exposure to O( 3 P) of 10 15 (10 14 ) cm À3 density, a SiO 2 growth rate of 9 nm/30 min (3 nm/30 min) can be achieved at 500 C, which is comparable to our oxidation rate for the side-flow (down-flow) chamber. Therefore, only 1% (or 0.1% for down-flow chamber) of the ozone molecules arrive at the surface and serve as an oxygen supplier.…”

Section: Optimization Of Sio 2 Film Formationsupporting

confidence: 61%

“…21,22) Also in the case of remote plasma oxidation, growth rate increased with O( 3 P) density in the gas phase as estimated by laser-induced fluorescence measurement. 23) From these results, we assume that in the case of the sideflow 12 mm 2 chamber, the number of oxidants (i.e., O( 3 P)) adjacent to the surface in the gas phase increases with processing pressure, while in the down-flow 4 inch chamber, it remains at a much lower level independent of processing pressure. The results that the rate of oxidation by HC-O 3 is not so enhanced compared with that by 10 vol.% O 3 under the same processing conditions (see Fig.…”

Section: Optimization Of Sio 2 Film Formationmentioning

confidence: 98%

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Rapid and Uniform SiO₂ Film Growth on 4 inch Si Wafer Using 100%-O₃ Gas

Nishiguchi

Sato

Nonaka

et al. 2005

Jpn. J. Appl. Phys.

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We have developed a lamp-heated cold-wall chamber that can process a large Si wafer using a highly concentrated (>90 vol.%) ozone gas to achieve rapid and uniform oxidation at a lower temperature than that used in conventional thermal oxidation. Uniform SiO2 formation with a film thickness uniformity of within 0.2 nm was achieved. The SiO2 growth rate, however, was not markedly accelerated compared with that achieved using conventional low (i.e., 10 vol.%)-concentration O3 gas. This was considered to originate from the decomposition of O3 gas in the gas phase before arriving at a heated surface as determined from the local ozone concentration measurements we performed. By increasing gas flow velocity so as to reduce the area of the thermal boundary layer on the heated surface in which decomposition of O3 to molecular oxygen is enhanced, SiO2 growth rate was actually improved.

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Section: Optimization Of Sio 2 Film Formationsupporting

confidence: 61%

Section: Optimization Of Sio 2 Film Formationmentioning

confidence: 98%

Rapid and Uniform SiO₂ Film Growth on 4 inch Si Wafer Using 100%-O₃ Gas

Nishiguchi

Sato

Nonaka

et al. 2005

Jpn. J. Appl. Phys.

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“…The O-atom densities obtained in plasma processes are generally higher than that obtained in the present study. Especially, high-density O atoms have been observed in microwave discharges and the decomposition efficiency of O 2 can be as high as 30%, which corresponds to the O-atom density of the order of 10 15 cm -3 [20,24]. The O-atom density in catalytic decomposition may be increased by one order by using a larger chamber and a longer filament.…”

Section: Discussionmentioning

confidence: 99%

Catalytic decomposition of O₂, NO, N₂O and NO₂on a heated Ir filament to produce atomic oxygen

Umemoto¹,

Kusanagi²

2008

J. Phys. D: Appl. Phys.

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Production of O atoms was confirmed in the catalytic decomposition of O 2 , NO, N 2 O and NO 2 on a heated Ir filament. No change in electric resistivity was observed when the filament was kept at 2350 K in the presence of 0.8 Pa of these species, showing that oxidation is not taking place under such conditions. The O-atom densities were evaluated by a vacuum-ultraviolet laser-induced fluorescence technique at 130.2 nm as well as a vacuum-ultraviolet laser absorption technique, by which the absolute values can be evaluated. Arrhenius-type filament temperature dependences were observed for the O-atom densities in all systems. The activation energies for nitrogen oxides were similar, but that for O 2 was smaller. The O-atom density was the highest when O 2 was used as a source gas and the density could be increased up to 2 × 10 12 cm-3. The O-atom density increased with the oxidant pressures, but showed saturation. The possible causes of such behaviors are discussed on the basis of the changes in the coverage conditions of the catalyst surfaces.

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“…Considering that the ground-state oxygen atom [O( 3 P)] and the first-excited-state oxygen atom [O( 1 D)] are the main species for achieving low-temperature oxidation, 13) oxidation would be enhanced by generating O( 3 P) and O( 1 D) atoms from ozone at wavelengths even longer than those used in conventional photo oxidation.…”

Section: Introductionmentioning

confidence: 99%

Rapid Oxidation of Silicon Using UV-Light Irradiation in Low-Pressure, Highly Concentrated Ozone Gas below 300 °C

Nishiguchi

Saitoh

Kameda

et al. 2007

jjap

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A low-temperature, damage-free process for growing ultrathin (<6 nm) silicon dioxide (SiO 2 ) films was successfully developed. The excitation of low-pressure, highly concentrated O 3 gas using photons with energies less than 5.6 eV led to rapid growth rates of 2 and 3 nm within 1 and 5 min, respectively, even when the process temperature was as low as 200 C. The enhanced oxidation rate was due to an increased supply of O( 1 D) atoms at the Si surface. Transmission electron microscope images revealed that the SiO 2 film formed with a uniform thickness and a smooth, distinct SiO 2 /Si interface. Capacitance-voltage and current-voltage measurements showed that 200 and 300 C as-grown films had a satisfactorily low density of mobile ions and trap charges as well as ideal insulating properties.

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Characteristics of O(³P) Density in O₂and Kr Gas Mixture Remote Plasma Oxidation of Silicon Measured by Two-Photon Absorption Laser-Induced Fluorescence

Cited by 4 publications

References 3 publications

Rapid and Uniform SiO₂ Film Growth on 4 inch Si Wafer Using 100%-O₃ Gas

Rapid and Uniform SiO₂ Film Growth on 4 inch Si Wafer Using 100%-O₃ Gas

Catalytic decomposition of O₂, NO, N₂O and NO₂on a heated Ir filament to produce atomic oxygen

Rapid Oxidation of Silicon Using UV-Light Irradiation in Low-Pressure, Highly Concentrated Ozone Gas below 300 °C

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Characteristics of O(3P) Density in O2and Kr Gas Mixture Remote Plasma Oxidation of Silicon Measured by Two-Photon Absorption Laser-Induced Fluorescence

Cited by 4 publications

References 3 publications

Rapid and Uniform SiO2 Film Growth on 4 inch Si Wafer Using 100%-O3 Gas

Rapid and Uniform SiO2 Film Growth on 4 inch Si Wafer Using 100%-O3 Gas

Catalytic decomposition of O2, NO, N2O and NO2on a heated Ir filament to produce atomic oxygen

Rapid Oxidation of Silicon Using UV-Light Irradiation in Low-Pressure, Highly Concentrated Ozone Gas below 300 °C

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Product

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Characteristics of O(³P) Density in O₂and Kr Gas Mixture Remote Plasma Oxidation of Silicon Measured by Two-Photon Absorption Laser-Induced Fluorescence

Rapid and Uniform SiO₂ Film Growth on 4 inch Si Wafer Using 100%-O₃ Gas

Rapid and Uniform SiO₂ Film Growth on 4 inch Si Wafer Using 100%-O₃ Gas

Catalytic decomposition of O₂, NO, N₂O and NO₂on a heated Ir filament to produce atomic oxygen