Characteristics of MOS diodes fabricated using sputter-deposited W or Cu/W films

Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes

“…Some reported SBHs showed a big change after annealing [6,7,12]; our SBH was relatively stable after annealing at 400 1C. The obtained electrical parameters from our MOS Schottky diode made all by sputtering are compatible to those from MS and MOS devices made by MOCVD and other approaches [2][3][4][5][6][7][8][9][10][11][12].…”

“…If the rougher surface leads to more interfacial reactions between insulator and semiconductor to form gallium oxide with a much higher dielectric constant of 10ε o vs 2.3ε o for SiO 2 , the parameters in Eqs. (8), (11), (13), and (14) will greatly increase. Due to the low process temperature, the reason for reactions to change electrical properties can be excluded.…”

“…To reduce the leakage current and improve the breakdown voltage in Schottky diodes, it is necessary to achieve a higher Schottky barrier. The development of a thin insulator layer with high-quality for the catalytic metalinsulator-semiconductor in MOS Schottky diode has become a key issue [6][7][8][9][10]. For forming the Schottky contact, the high work-function metals (Au, Pt, Ni, W, Pd, Ru, Ir, etc.)…”

“…For forming the Schottky contact, the high work-function metals (Au, Pt, Ni, W, Pd, Ru, Ir, etc.) have been widely used in MS and MOS diodes [2][3][4][5][7][8][9][10]. Several groups have put many efforts to explore MOS Schottky diodes with different methods.…”

Research on Cu–W homogeneous film structure prepared by ion beam sputtering

“…To the two elements which are non-fusible and incompatible with each other, researches mainly focus on the special structure formed under extreme conditions, such as using magnetron sputtering to deposit Cu-W multilayer film [4,5] or using ion beam sputtering [6,7], ion beam irradiation [8,9] and electron beam evaporation to deposit Cu-W composite film [10]. Researches on Cu-W homogeneous composite film are few.…”