Characteristics of mask layer on (100) silicon induced by tribo-nanolithography with diamond tip cantilevers based on AFM

Park, June-Woo; Lee, S.S.; So, B.S.; Jung, Yung-Joon; Kawasegi, Noritaka; Morita, Noboru; Lee, D.W.

doi:10.1016/j.jmatprotec.2006.11.151

Cited by 22 publications

(9 citation statements)

References 8 publications

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“…Due to its lower etching rate in KOH solution than Si(100), the SiO x on the non-scanned area was served as a mask to protect the Si(100) substrate below from etching. Under the present experimental condition, the etching selectivity of SiO x :Si(100) was estimated as about 1:250, which was close to the reported selectivity of SiO 2 :Si(100) in KOH solution (less than 1:185 27 ).…”

Section: Resultssupporting

confidence: 88%

Nondestructive nanofabrication on Si(100) surface by tribochemistry-induced selective etching

Guo

Chen

et al. 2015

Sci Rep

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A tribochemistry-induced selective etching approach is proposed for the first time to produce silicon nanostructures without lattice damage. With a ~1 nm thick SiOx film as etching mask grown on Si(100) surface (Si(100)/SiOx) by wet-oxidation technique, nano-trenches can be produced through the removal of local SiOx mask by a SiO2 tip in humid air and the post-etching of the exposed Si in potassium hydroxide (KOH) solution. The material removal of SiOx mask and Si under low load is dominated by the tribochemical reaction at the interface between SiO2 tip and Si/SiOx sample, where the contact pressure is much lower than the critical pressure for initial yield of Si. High resolution transmission electron microscope (HRTEM) observation indicates that neither the material removal induced by tribochemical reaction nor the wet etching in KOH solution leads to lattice damage of the fabricated nanostructures. The proposed approach points out a new route in nondestructive nanofabrication.

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Section: Resultssupporting

confidence: 88%

Nondestructive nanofabrication on Si(100) surface by tribochemistry-induced selective etching

Guo

Chen

et al. 2015

Sci Rep

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“…Scanning probe microscope (SPM), particularly in the form of atomic force microscopy uses a physical probe scanning across the sample using piezoelectric ceramics and the position of the probe and the feedback signal are electronically recorded to produce a three-dimensional map of the surface or other information depending on the specialty probe used (Park et al, 2007). The scanning probe microscope used in this study was a CSPM4000 atomic force microscopy made by Benyuan Co., Ltd. Scanning was carried out in contact mode atomic force microscopy and all samples were scanned at room temperature in atmosphere.…”

Section: Afm Characterisationmentioning

confidence: 99%

Characterization of polymer nanofibers coated by reactive sputtering of zinc

Wei

Cai

et al. 2009

Journal of Materials Processing Technology

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“…The method is based on the single crystal silicon property to be transparent in IR range, while metal and amorphous silicon are opaque. In [35][36][37] scratching of silicon on standard equipment is considered as an accessible method of the formation of amorphous structures as wear products. The studies of scratching single crystal silicon with a spherical diamond indenter to investigate the material plastic edging under joint thermal and mechanical effects are described in [38,39].…”

Section: Plastic Brittle Transition and Phase Transformationsmentioning

confidence: 99%

Studies of the ductile mode of cutting brittle materials (A review)

Kovalchenko

2013

J. Superhard Mater.

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Theoretical and experimental studies of the ductile mode of cutting brittle materials (semicon ductors, ceramics, and glass) have been considered. The ductile mode of cutting has been based on the implementation of high pressure induced phase transformations in a material machined that followed by a cutting of a transformed amorphous layer, which makes it possible to avoid cracking. Publications on studies of phase transitions in brittle materials in the course of the indentation, scratching, friction, and cutting have been reviewed. It has been shown that the cutting depth, cutting edge radius of a tool, chip thickness, tool cutting edge inclination, and crystallographic orientation of a material machined and dia mond tool as well as a type of lubricoolant are the decisive factors in implementing the ductile mode of cutting. KOVALCHENKO 1 2 Cutting length 3 4 Resistance force, N Fig. 3. Scheme of different modes of removing a brittle material with increasing normal load and cutting depth [42]: elastic (1) and elastoplastic (2) deformations, plastic (3) and brittle (4) removal of the material.

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Characteristics of mask layer on (100) silicon induced by tribo-nanolithography with diamond tip cantilevers based on AFM

Cited by 22 publications

References 8 publications

Nondestructive nanofabrication on Si(100) surface by tribochemistry-induced selective etching

Nondestructive nanofabrication on Si(100) surface by tribochemistry-induced selective etching

Characterization of polymer nanofibers coated by reactive sputtering of zinc

Studies of the ductile mode of cutting brittle materials (A review)

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