Characteristics of laser-annealed ZnO thin film transistors

Kim, Jun-Je; Bak, Jun-Yong; Lee, Jong Hoon; Kim, Hong Seung; Jang, Nakwon; Yun, Young; Lee, Won–Jae

doi:10.1016/j.tsf.2009.09.190

Cited by 26 publications

(13 citation statements)

References 8 publications

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“…Wurtzite phase ZnO has versatility in many applications including ultraviolet (UV) light emitting diodes, UV photo detectors, solar cell windows, gas sensors, acoustic wave resonator devices, transparent conductors, and transparent thin film transistors (TFTs) [3,4]. Particularly, ZnObased TFTs are well suited for the active matrix liquid crystal displays (AMLCDs) or entirely transparent displays [5][6][7][8] because of very low opacity, wide band gap (3.37 eV), binding energy (60 meV), and higher intrinsic mobility.…”

Section: Introductionmentioning

confidence: 99%

ZnO-Based Thin Film Transistor Fabricated Using Radio Frequency Magnetron Sputtering at Low Temperature

Surabi¹,

Chandradass²,

Park³

2014

Materials and Manufacturing Processes

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Thin film transistors (TFTs) were fabricated on a glass substrate using zinc oxide material as a channel layer. The layers were grown by radio frequency magnetron sputtering method at a temperature of 100 C. The output characteristics of a TFT device showed that there is a reduction in drain current at increased drain-source voltage and gate-source voltage. This evidenced the existence of self-heating effect which may be due to increased donor type point defects. The electrical characteristics of a device show an improved intrinsic channel mobility of 4 cm 2 /Vs, threshold voltage of 12 V, sub-threshold swing of 1 V/decade, and very much decreased off current of the order 10 À12 A.

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Section: Introductionmentioning

confidence: 99%

ZnO-Based Thin Film Transistor Fabricated Using Radio Frequency Magnetron Sputtering at Low Temperature

Surabi¹,

Chandradass²,

Park³

2014

Materials and Manufacturing Processes

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“…[2]. Strong interest for TCO materials led recent research to investigate the effects of post-deposition annealing by nanosecond (ns) pulsed lasers on the optical and electrical properties of different TCOs [3][4][5][6][7][8][9][10]. The use of rapid thermal laser annealing, as an alternative process to conventional furnace annealing, is a cost effective solution.…”

Section: Introductionmentioning

confidence: 99%

Optical and electrical properties of SnO₂thin films after ultra-short pulsed laser annealing

et al. 2013

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Ultra-short pulsed laser sources, with pulse durations in the ps and fs regime, are commonly exploited for cold ablation. However, operating ultra-short pulsed laser sources at fluence levels well below the ablation threshold allows for fast and selective thermal processing. The latter is especially advantageous for the processing of thin films. A precise control of the heat affected zone, as small as tens of nanometers, depending on the material and laser conditions, can be achieved. It enables the treatment of the upper section of thin films with negligible effects on the bulk of the film and no thermal damage of sensitive substrates below. By applying picosecond laser pulses, the optical and electrical properties of 900 nm thick SnO 2 films, grown by an industrial CVD process on borofloat ® -glass, were modified. The treated films showed a higher transmittance of light in the visible and near infra-red range, as well as a slightly increased electrical sheet resistance. Changes in optical properties are attributed to thermal annealing, as well as to the occurrence of LaserInduced Periodic Surface Structures (LIPSSs) superimposed on the surface of the SnO 2 film. The small increase of electrical resistance is attributed to the generation of laser induced defects introduced during the fast heating-quenching cycle of the film. These results can be used to further improve the performance of SnO 2 -based electrodes for solar cells and/or electronic devices.

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“…The contribution from the instrument can be removed using separately measured reflections of a standard material employing the same instrumental configuration and X-ray wavelength. Here, a standard sample, LaB 6 , was used for this purpose and an interpolation routine was employed to determine the instrumental line profile for the measured reflections. Subsequently, a deconvolution procedure was adopted to obtain the Fourier coefficients of the only structural broadened profiles [24].…”

Section: Lattice Structure and Presence Of Strainmentioning

confidence: 99%

“…Due to the low fabrication cost, SnO 2 thin films find application in different areas, including glass coatings for thermal insulation, oxidation catalysts, gas sensors, flat panel displays, touch panels, flexible electronics, dye-sensitized solar cells (DSSC), thin film silicon and cadmium telluride (CdTe) solar cells, light-emitting diodes (LEDs), etc [3]. A strong interest for TCO materials led research into the effects of post deposition annealing by nanosecond (ns) laser pulses on the optical and electrical properties of different TCOs [4][5][6][7][8][9][10][11]. The use of Rapid Thermal Laser Annealing (RTLA) is an alternative process to conventional furnace annealing.…”

Section: Introductionmentioning

confidence: 99%

Annealing of SnO_2 thin films by ultra-short laser pulses

Scorticati¹,

Illiberi²,

Bor³

et al. 2014

Opt. Express

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Post-deposition annealing by ultra-short laser pulses can modify the optical properties of SnO 2 thin films by means of thermal processing. Industrial grade SnO 2 films exhibited improved optical properties after picosecond laser irradiation, at the expense of a slightly increased sheet resistance [Proc. SPIE 8826, 88260I (2013)]. The figure of merit φ = T 10 / R sh was increased up to 59% after laser processing. In this paper we study and discuss the causes of this improvement at the atomic scale, which explain the observed decrease of conductivity as well as the observed changes in the refractive index n and extinction coefficient k. It was concluded that the absorbed laser energy affected the optoelectronic properties preferentially in the top 100-200 nm region of the films by several mechanisms, including the modification of the stoichiometry, a slight desorption of dopant atoms (F), adsorption of hydrogen atoms from the atmosphere and the introduction of laser-induced defects, which affect the strain of the film. . J. Chae, L. Jang, and K. Jain, "High-resolution, resistless patterning of indium-tinoxide thin films using excimer laser projection annealing process," Mater. Lett. 64(8), 948-950 (2010). 12. G. Haacke, "New figure of merit for transparent conductors," J. Appl. Phys. 47(9), 4086-4089 (1976

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Characteristics of laser-annealed ZnO thin film transistors

Cited by 26 publications

References 8 publications

ZnO-Based Thin Film Transistor Fabricated Using Radio Frequency Magnetron Sputtering at Low Temperature

ZnO-Based Thin Film Transistor Fabricated Using Radio Frequency Magnetron Sputtering at Low Temperature

Optical and electrical properties of SnO₂thin films after ultra-short pulsed laser annealing

Annealing of SnO_2 thin films by ultra-short laser pulses

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Characteristics of laser-annealed ZnO thin film transistors

Cited by 26 publications

References 8 publications

ZnO-Based Thin Film Transistor Fabricated Using Radio Frequency Magnetron Sputtering at Low Temperature

ZnO-Based Thin Film Transistor Fabricated Using Radio Frequency Magnetron Sputtering at Low Temperature

Optical and electrical properties of SnO2thin films after ultra-short pulsed laser annealing

Annealing of SnO_2 thin films by ultra-short laser pulses

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Optical and electrical properties of SnO₂thin films after ultra-short pulsed laser annealing