Characteristics of InP on GaAs substrate using Zn-doped Al(Ga)InAs metamorphic buffers

Sun, Yanhong; Zhao, Yongming; Sheng, Yu; Dong, Junping

doi:10.1007/s10854-017-6724-x

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2018

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“…Isoparametric solid solutions of A 3 B 5 compounds have the necessary characteristics for the creation on their basis of high-efficiency optoelectronic devices [1,2]. The use of three-and fourcomponent A 3 B 5 solid solutions makes it possible to create devices for optoelectronics in a wide spectral range.…”

Section: Introductionmentioning

confidence: 99%

Growing of AlInGaAsP Solid Solutions on InP Substrates for Photovoltaic Converters

Lunin

Lunina

Kazakova

2018

SSP

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The article contains a description of various growing conditions for isoparametric heterostructures based on InP. It is shown that the structural perfection of solid solutions grown on InP substrates is influenced by parameters, such as the temperature of the epitaxy process, the temperature gradient, and the composition and thickness of the liquid zone. By analyzing the quality of the surface and the structural perfection of isoparametric AlGaInAsP solid solutions, based on InP, optimal parameters of the zone recrystallization process in the temperature gradient field (TGZR), at which the epitaxial films had minimal roughness and high crystalline perfection, were found.

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Section: Introductionmentioning

confidence: 99%