Characteristics of InGaP/InGaAs Pseudomophic Field-Effect Transistors with Modulated InGaAs Doping Channels

Hydrogen Sensing Characteristics of AlGaInP/InGaAs Complementary Co-Integrated Pseudomorphic Doping-Channel Field-Effect Transistors

“…Recently, there has been considerable interest in the potential of III-V GaAs-based field-effect transistors (FETs) in signal amplifier and advanced logic applications. 1,2 In order to promote the performance, the GaAs channel layer could be replaced with an InGaAs strain layer because the InGaAs strain channel layer has smaller electron effective mass, higher electron mobility, and higher peak electron velocity, [3][4][5] though the In mole fraction as well as the thickness of InGaAs strain layer is critically limited. 6 Another heterostructure, i.e., In 0.5 (Ga 1-x Al x ) 0.5 P/GaAs, has attracted researcher's attention for the high-speed device and circuit applications.…”