Characteristics of Indium Zinc Oxide Thin Films Deposited by Radio Frequency Reactive Magnetron Sputtering for Solar Cells Application

Abstract

Indium zinc oxide (IZO) thin films were deposited on a glass substrate by radio frequency (rf) reactive magnetron sputtering method. As the rf power increased, the deposition rate and resistivity increased while the optical transmittance decreased owing to the increase of grain size. With increasing gas pressure, the resistivity increased and the transmittance decreased. Atomic force microscopy and scanning electron microscopy were employed to observe the film surface. The IZO films displayed a resistivity of 3.8 × 10-4 Ω cm and a transmittance of about 90% in visible region.

Inductively Coupled Plasma Reactive Ion Etching of Gallium Indium Zinc Oxide Thin Films Using Cl2/Ar Gas Mix

“…Transparent conducting oxide (TCO) thin films including indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), tin oxide (SnO), and gallium indium oxide (GIO) have been widely used as transparent electrodes in flat panel displays such as thin-film transistor liquid crystal display (TFT-LCD) and thin-film electroluminescent (TFEL) display devices. 1,2) Recently, high performance TFTs with amorphous gallium indium zinc oxide (a-GIZO) channel layers deposited by physical vapor deposition has been reported. [3][4][5] These a-GIZO TFTs prepared on flexible substrates by a low temperature process showed high mobility (>10 cm 2 V À1 s À1 ) and an excellent subthreshold gate swing (0.01 V/decade) with reasonable I on/off ratio even in the amorphous phase.…”

Inductively Coupled Plasma Etching of Indium Zinc Oxide Thin Films with HBr∕Ar Discharges

“…[1][2][3][4] In particular, ITO thin films are generally used for these applications. However, in order to have high transmittance of 80-90% and low resistivity of 2-4 ϫ 10 −4 ⍀ cm, these thin films should be heat treated at a temperature above 300°C.…”

“…[1][2][3] Owing to the capability of processing at low temperature, IZO thin film is a prospective electrode that can be applied to flexible display devices and solar cells using polycarbonate and polyethyleneterephlate as well as conventional devices requiring TCO films. As the critical dimensions of the devices shrink, a dry etching process for IZO thin films should be developed.…”

“…Transparent conducting oxide ͑TCO͒ thin films such as indium tin oxide ͑ITO͒, fluorine-doped tin oxide, zinc oxide, and tin oxide films are extensively used as transparent electrodes in solar cells, gas sensors, and flat panel displays, including thin films transistor liquid crystal displays, plasma display panels, and thin-film electroluminescent display devices. [1][2][3][4] In particular, ITO thin films are generally used for these applications. However, in order to have high transmittance of 80-90% and low resistivity of 2-4 ϫ 10 −4 ⍀ cm, these thin films should be heat treated at a temperature above 300°C.…”

“…However, in order to have high transmittance of 80-90% and low resistivity of 2-4 ϫ 10 −4 ⍀ cm, these thin films should be heat treated at a temperature above 300°C. 1 In addition, high temperature annealing of ITO films limits fabrication of devices on plastic substrates.…”