Characteristics of Indium-Tin-Oxide/Silver/Indium-Tin-Oxide Sandwich Films and Their Application to Simple-Matrix Liquid-Crystal Displays

Abstract

We developed low-resistivity transparent conductive films having the structure of indium-tin-oxide/silver/indium-tin-oxide (ITO/Ag/ITO). The thin silver film was sandwiched by ITO films. Our goal was to study the characteristics of the sandwich films and the display characteristics of simple-matrix liquid-crystal displays (LCDs) fabricated using the sandwich film. The electrical and optical characteristics of the sandwich films depended greatly on the thickness of the ITO and silver layers. Low resistivity and high transmittance were obtained when the film structure had a thickness of ITO/Ag/ITO: 40 nm/15 nm/40 nm. The simple-matrix LCD fabricated using a sandwich of ITO/Ag/ITO exhibited 27%–48% reduction in the level of crosstalk compared to the conventionally available simple-matrix LCDs fabricated using a single-layer ITO film; thus, the display performance was improved.

Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices

“…The initial stage involves the seeding of the substrate; here, oxidised In-Sn droplets condense on the substrate surface, as shown in Fig. 1a, which form the nucleation seeds for subsequent nanowire growth; other large area 3 examples of the substrate seeding can be found in the Supporting Information, Fig. S1.…”

“…Figure 2c shows the electrical characteristics of the ITO nanowire top-contacted Si/SiGe MQW LEDs measured at room temperature. The LEDs with the nanowire contact layer exhibit a forward-bias turn-on voltage of 0.55 V at an injection current of 10 mA, which is a marked improvement over LEDs and quantum cascade lasers (QCLs) with oxidized Ni/Au, Ni/Cr or thin film ITO/Ag/ITO sandwich contacts [3]. We conducted electrical measurements on a series of nanowire-containing segments using corner contacts to areas of the nanowire layer in the van der Pauw geometry [18].…”

The Influence of Al Underlayer on the Optical and Electrical Properties of GZO/Al Thin Films

“…One way to improve the optical and electrical properties of TCO films without substrate heating is to use TCO/metal/TCO structures that have lower resistivity, compared to TCO single layer films of the same thickness [3][4][5]. In this study, transparent and conducting GZO films were deposited on Al coated glass substrate without intentional substrate heating, using DC and RF magnetron sputtering, and the effect of the Al buffer layer on the optical and electrical properties of the GZO films, and the optimal thickness of the Al buffer layer were investigated by UVvisible spectrometry, four-point probe measurement, X-ray diffraction (XRD), and atomic force microscopy (AFM).…”

Durability of Indium Tin Oxide-Silver-Indium Tin Oxide Films against Moisture Investigated Through The Wettability of The Top Oxide Layer

“…The indium tin oxide-silver-indium tin oxide (ITO-Ag-ITO) films 1,2) with relatively low resistivity have the potential to replace the single-layer ITO for the application of transparent electrodes, although the transparency of ITO-Ag-ITO is slightly lower than that of ITO. However, several hazy spots will form in the ITO-Ag-ITO films and then reduce their conductivity and transparency after exposure to the moist environment for a long time.…”