Characteristics of hetero‐structured thermoelectric devices with a ‐ Si / Mg ₂ Si‐stacked thin film layers

Abstract

New high-quality thermoelectric devices with amorphous silicon/ magnesium silicide (a-Si/Mg 2 Si)-stacked hetero-structure thin film layers have been fabricated using both radio frequency sputtering and rapid thermal annealing techniques. The thermoelectric properties of the a-Si/Mg 2 Si hetero-structure layers were found to be much superior to those of the a-Si layer.