2017
DOI: 10.1007/s11664-017-5604-8
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Characteristics of Extended-Gate Field-Effect Transistor (EGFET) Based on Porous n-Type (111) Silicon for Use in pH Sensors

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Cited by 25 publications
(15 citation statements)
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“…The resulting electric field modifies the conductance of the field effect transistor (FET), and the current flowing in the channel between the source and the drain terminals is used to measure pH. 17 The ISFET is another technique where the whole transistor is immersed in the solution and its gate dielectric is exposed, i.e., replacing the transistor gate with the electrolyte. As H + ions accumulate on the ISFET's gate dielectric, the resulting electric field modulates the current in the channel.…”
Section: Overviewmentioning
confidence: 99%
See 1 more Smart Citation
“…The resulting electric field modifies the conductance of the field effect transistor (FET), and the current flowing in the channel between the source and the drain terminals is used to measure pH. 17 The ISFET is another technique where the whole transistor is immersed in the solution and its gate dielectric is exposed, i.e., replacing the transistor gate with the electrolyte. As H + ions accumulate on the ISFET's gate dielectric, the resulting electric field modulates the current in the channel.…”
Section: Overviewmentioning
confidence: 99%
“…EGFET pH sensors use the physical protonation and deprotonation reactions that cause a difference in the surface potentials at the interface between the electrolyte solution and the extended gate of a transistor. The resulting electric field modifies the conductance of the field effect transistor (FET), and the current flowing in the channel between the source and the drain terminals is used to measure pH . The ISFET is another technique where the whole transistor is immersed in the solution and its gate dielectric is exposed, i.e., replacing the transistor gate with the electrolyte.…”
Section: Materials For Electrochemical Ph Sensorsmentioning
confidence: 99%
“…Some of the brain sections were tested by IHC and HE staining as some previous reports presented. 33 Statistical Analysis. All experimental results were expressed as mean ± SD.…”
Section: ■ Introductionmentioning
confidence: 99%
“…Nessa configuração é proporcionada uma ampla região de detecção permitindo também a utilização de amostras maiores, sem que haja a limitação do tamanho do MOSFET [7].…”
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“…A medida de pH está relacionada à variação no potencial de superfície devido à interação do eletrólito com a porta do transistor, produzindo assim um campo elétrico que afeta a condutância do canal FET [8]. Dessa maneira, ocorre uma variação na corrente que flui entre os terminais de dreno e fonte (I DS ) do MOSFET, permitindo relacionar esta corrente com a concentração iônica da solução eletrolítica [7].…”
unclassified