2000
DOI: 10.1109/3.863962
|View full text |Cite
|
Sign up to set email alerts
|

Characteristics of Er-doped Al/sub 2/O/sub 3/ thin films deposited by reactive co-sputtering

Abstract: Abstract-Er-dopedIndex Terms-Er-doped Al 2 O 3 , integrated optics, optical amplifiers, reactive co-sputtering.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

4
34
0

Year Published

2006
2006
2012
2012

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 28 publications
(38 citation statements)
references
References 14 publications
4
34
0
Order By: Relevance
“…In contrast, thin film growth methods typically involve deposition on oxidized silicon wafers (the oxide layer on the silicon providing the lower cladding layer) or other substrates, thus potentially allowing for integration with other devices on the same substrate and fabrication of devices over a large area. Methods which have been utilized for depositing Er-doped waveguiding films include atomic layer deposition [129,151], dip-coating [152], flame hydrolysis [32,153], high vacuum chemical vapour deposition (HV-CVD) [154], plasma-enhanced chemical vapour deposition (PECVD) [83,127,138,[155][156][157], pulsed laser deposition (PLD) [59,126,145,[158][159][160][161][162][163], reactive cosputtering [68,84,87,128,[164][165][166], RF-sputtering [40,98,131,133,137,[167][168][169][170], the sol-gel method [134,[171][172][173][174][175]…”
Section: Waveguide Fabrication Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…In contrast, thin film growth methods typically involve deposition on oxidized silicon wafers (the oxide layer on the silicon providing the lower cladding layer) or other substrates, thus potentially allowing for integration with other devices on the same substrate and fabrication of devices over a large area. Methods which have been utilized for depositing Er-doped waveguiding films include atomic layer deposition [129,151], dip-coating [152], flame hydrolysis [32,153], high vacuum chemical vapour deposition (HV-CVD) [154], plasma-enhanced chemical vapour deposition (PECVD) [83,127,138,[155][156][157], pulsed laser deposition (PLD) [59,126,145,[158][159][160][161][162][163], reactive cosputtering [68,84,87,128,[164][165][166], RF-sputtering [40,98,131,133,137,[167][168][169][170], the sol-gel method [134,[171][172][173][174][175]…”
Section: Waveguide Fabrication Methodsmentioning
confidence: 99%
“…D. B. Bradley and M. Pollnau: Erbium-doped integrated waveguide amplifiers and lasers many glass host materials have been investigated for active planar devices. These include silicate glass [32,[114][115][116][117], phosphate glass [39,81,[118][119][120][121][122][123][124], fluoride glass [125], and amorphous aluminum oxide [36,[126][127][128][129]. In addition, multi-component oxide glasses [38,[130][131][132][133][134][135][136][137][138][139][140][141][142][143][144][145] offer the possibility to tailor various properties such as the gain spectrum and the refractive index.…”
Section: Laser and Photonics Reviewsmentioning
confidence: 99%
“…Although rare-earth doped Al 2 O 3 waveguides have already been demonstrated to be an attractive material system for integrated optical amplifiers and tunable light sources (14), (13), the previous studies still yield some disadvantages which had to be overcome. The propagation loss values for Al 2 O 3 slab waveguides reported in (14) was optimized to 0.35 dB/cm, however only after an additional annealing step which reduced the loss of the as-deposited layers being as high as 20 dB/cm.…”
Section: Introductionmentioning
confidence: 99%
“…Over the past decade various research groups have developed Al 2 O 3 deposition processes based on different techniques: pulsed laser deposition (PLD) (1), (2), atomic layer deposition (ALD) (3), (4), chemical vapor deposition (CVD) (5), (6), sol-gel method (7), (8), (9) sputtering from a dielectric target (10), (11) and reactive co-sputtering based on a metallic target (12), (13).…”
Section: Introductionmentioning
confidence: 99%
“…Al 2 O 3 :Er 3+ waveguide amplifiers have been reported by several research groups [40][41][42][62][63][64][65][66]. A maximum internal net gain of 2 dB/cm at 1533 nm by pumping at 977 nm [40], and a net gain of up to 11 dB at 1532 nm with data transmission at a rate of 170 Gbit/s [42] …”
Section: Al 2 O 3 :Nd 3+ Waveguidesmentioning
confidence: 99%