Characteristics of Cu(In,Ga)Se2 (CIGS) thin films deposited by a direct solution coating process

Park, MyoungGuk; Ahn, SeJin; Yun, Jae Ho; Gwak, Jihye; Cho, Ara; Ahn, SeoungKyu; Shin, Keeshik; Nam, Dahyun; Cheong, Hyeonsik; Yoon, Kwon Ha

doi:10.1016/j.jallcom.2011.09.080

Cited by 89 publications

(43 citation statements)

References 38 publications

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“…All PL spectra consist of one strong peak in the wavelength range 492-542 nm (blue-green emission). Further increase in thin film thickness, the peak at which the maximum emission occurs slightly shifts towards shorter wavelength region (higher energy positions), this result may be related to the increase in the band gap energy [21]. This result is in agreement with the optical analysis.…”

Section: Photoluminescence (Pl)supporting

confidence: 88%

Characterization of β-In2−xAlxS3 thin films prepared by chemical spray pyrolysis technique

Ajili

Kamoun

2014

J Mater Sci: Mater Electron

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Indium sulfide (In 2 S 3 ) is a good window or buffer layer for photovoltaic application. In this work, b-In 2-x Al x S 3 thin films with different thicknesses (400, 442, 646 and 714 nm) are successfully synthesized on heated glass substrates using a chemical spray pyrolysis technique. The thin film thickness effect on the structural, optical and photoluminescence (PL) properties of b-In 2-x Al x S 3 material is studied. The X-ray diffraction patterns suggest the formation of b-In 2 S 3 cubic phase preferentially oriented towards (400) direction. The level of the residual dislocation seems to be reduced to 3.12 9 10 9 lines mm -2 for the optimum thickness (646 nm) for which the b-In 2-x Al x S 3 film crystallinity is the best one. In order to enhance the electrical properties, b-In 2-x Al x S 3 layers are annealed in air at 400°C for different annealing times (15, 30 and 45 min). The minimum resistivity, maximum Hall mobility and carrier concentration are found for b-In 2-x Al x S 3 films annealed for 30 min. All samples have high transmittance of about 75 % but the wide band gap (E g = 3.32 eV) is obtained for this optimum thickness. This result indicates good optical quality of b-In 2-x Al x S 3 layers. Defects-related PL properties are also discussed.

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Section: Photoluminescence (Pl)supporting

confidence: 88%

Characterization of β-In2−xAlxS3 thin films prepared by chemical spray pyrolysis technique

Ajili

Kamoun

2014

J Mater Sci: Mater Electron

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“…Thin film solar cells based on polycrystalline Cu-chalcopyrite, such as CuInSe 2 (CIS), Cu(In,Ga)Se 2 (CIGS), and Cu(In,Ga)(S,Se) (CIGSSe), have attracted considerable interest for use in photovoltaic devices, owing to their relatively high efficiency in both large area and laboratory-sized solar cells [1,2]. In CIGS-based thin film solar cells, a chemical bath deposited CdS (CBD-CdS) buffer layer is placed between an absorber layer and a transparent conducting oxide (TCO) layer because of the following advantages: (i) the buffer layer protects the modification that results from chemical species in the sensitive surface of the absorber and junction regions, (ii) the damage caused by physical deposition during the subsequent TCO deposition process, and (iii) the appropriate interface charge adjusted during the deposition process [3,4].…”

Section: Introductionmentioning

confidence: 99%

Preparation and characteristics of chemical bath deposited ZnS thin films: Effects of different complexing agents

Shin

Agawane

Gang

et al. 2012

Journal of Alloys and Compounds

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“…They have a large optical absorption coefficient (10 5 cm -1 ) and have yielded highest conversion efficiencies among thin film technologies at laboratory scale [4,5,6].…”

mentioning

confidence: 99%

Electrodeposition of CuGaSe2 and CuGaS2 thin films for photovoltaic applications

Ullah

Mollar

Marı́

2016

J Solid State Electrochem

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CuGaSe2 and CuGaS2 polycrystalline thin film absorbers were prepared by one-step electrodeposition from an aqueous electrolyte containing CuCl2, GaCl3, and H2SeO3. The pH of the solution was adjusted to 2.3 by adding HCl and KOH. Annealing improved crystallinity of CuGaSe2 and further annealing in sulfur atmosphere was required to obtain CuGaS2 layers. The morphology, topography, chemical composition and crystal structure of the deposited thin films were analysed by Scanning Electron Microscopy, Atomic Force Microscopy, Energy Dispersive Spectroscopy and X-Ray Diffraction, respectively. X-Ray diffraction showed that the as-deposited CuGaSe2 film exhibited poor crystallinity, but which improved dramatically when the layers were annealed in forming gas atmosphere for 40 min. Subsequent sulfurization of CuGaSe2 films was performed at 400 °C for 10 min in presence of molecular sulfur and under forming gas atmosphere.The effect of sulfurization was the conversion of CuGaSe2 into CuGaS2. The formation of CuGaS2 thin films was evidenced by the shift observed in the X-Ray diffraction pattern and by the blue shift of the optical band gap. The bandgap of CuGaSe2 was found to be 1.66 eV, while for CuGaS2 it raised up to 2.2 eV. A broad intermediate absorption band associated to Cr and centred at 1.63 eV was observed in Cr-doped CuGaS2 films.

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Characteristics of Cu(In,Ga)Se2 (CIGS) thin films deposited by a direct solution coating process

Cited by 89 publications

References 38 publications

Characterization of β-In2−xAlxS3 thin films prepared by chemical spray pyrolysis technique

Characterization of β-In2−xAlxS3 thin films prepared by chemical spray pyrolysis technique

Preparation and characteristics of chemical bath deposited ZnS thin films: Effects of different complexing agents

Electrodeposition of CuGaSe2 and CuGaS2 thin films for photovoltaic applications

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