Characteristics of Compactness of SiO2 Thin Films Prepared by PECVD Method

Heping, 肖和平 Xiao; Rujian, 孙如剑 Sun; Xiangzhu, 马祥柱 Ma; Kai, 杨凯 Yang; Shuangxiang, 张双翔 Zhang

doi:10.3788/lop53.123101

激光与光电子学进展

2016

DOI: 10.3788/lop53.123101

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Characteristics of Compactness of SiO2 Thin Films Prepared by PECVD Method

肖和平 Xiao Heping¹,

孙如剑 Sun Rujian²,

马祥柱 Ma Xiangzhu³

et al.

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Characteristics of Compactness of SiO2 Thin Films Prepared by PECVD Method

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