Characteristics of chemically assisted ion beam etching of gallium nitride

Adesida, I.; Ping, A. T.; Youtsey, C.; Dow, Thomas A.; Khan, M. Asif; Olson, D. T.; Kuznia, J. N.

doi:10.1063/1.112191

Cited by 88 publications

(43 citation statements)

References 13 publications

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“…Most authors use electron cyclotron resonance (ECR) plasma based on CH 4 -H 2 -Ar, Cl 2 -H 2 , or CH 4 -H 2 -Ar-Cl 2 1-3 or chemically assisted ion beam etching (CAIBE). 4,5 Only a few reports describe dry etching of GaN using various chemistries in a more conventional reactive ion etching (RIE) and the number of papers dealing with a SiCl 4 -based chemistry is even lower. 6 Experimental In this paper, we present the results of RIE etching of metallorganic vapor-phase epitaxy (MOVPE) grown GaN on a (0001) sapphire substrate.…”

mentioning

confidence: 99%

High Etch Rate and Smooth Morphology Using a Novel Chemistry in Reactive Ion Etching of GaN

Karouta

Jacobs

Vreugdewater

et al. 1999

Electrochem. Solid-State Lett.

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mentioning

confidence: 99%

High Etch Rate and Smooth Morphology Using a Novel Chemistry in Reactive Ion Etching of GaN

Karouta

Jacobs

Vreugdewater

et al. 1999

Electrochem. Solid-State Lett.

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“…Transfer into the semiconductor was achieved by dry etching in a chemically assisted ion-beam etching ͑CAIBE͒ system. 7 We then overgrew the etched surface with a ͑second͒ 10-nm-thick Al 0.2 Ga 0.8 N:Mg overlayer and a nominally 150-nm-thick GaN:Mg upper waveguide layer. This configuration allowed optical pumping through the surface.…”

mentioning

confidence: 99%

Realization of a complex-coupled InGaN/GaN-based optically pumped multiple-quantum-well distributed-feedback laser

Hofstetter

Romano

Paoli

et al. 2000

Applied Physics Letters

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We demonstrate an optically pumped complex-coupled InGaN/GaN-based multiple-quantum-well distributed-feedback laser in the violet/blue spectral region. The third-order grating providing feedback was defined holographically and dry etched through a portion of the active region by chemically assisted ion-beam etching. Epitaxial overgrowth of the GaN waveguide completed the device structure without introducing dislocations, as shown by transmission electron microscopy. The laser emitted light at 392.7 nm with high side-mode suppression and a narrow linewidth of 1.5 Å. In contrast to Fabry-Pérot lasers fabricated from the same piece of material, only a very minor change in emission wavelength was observed when operating the device at higher pump intensities.Short-wavelength semiconductor lasers are very attractive light sources for both data storage and scanning applications. During the last few years, both pulsed and continuous-wave operation of InGaN/GaN-based blue lasers have been demonstrated at room temperature. 1,2 Most research groups have typically used sapphire substrates for GaN growth. However, the misorientation between the sapphire and the GaN cleavage planes does not readily permit cleaving of the facets. Dry-etched mirrors with highreflective coatings appear to work satisfactorily in this material system, 3 but there is still a certain need to improve the cavity properties of nitride lasers, especially as far as mode selection is concerned. The use of distributed feedback ͑DFB͒ has already been explored somewhat for the purpose of improved mode and wavelength stability. Consequently, optically pumped 4,5 and electrically injected DFB lasers 6 in the InGaN/GaN material system have been reported recently. These devices were based on index coupling between the forward and backward propagating modes, which usually leads to additional loss through scattering at the corrugated interface between the waveguide and the cladding layer. Also, index coupling tends to be weak for higher-order gratings with nonideal tooth shape. Hence, we describe in this letter the fabrication of a nitride-based multi-quantum-well ͑MQW͒ DFB laser with a complex-coupled ͑i.e., index-plus gain-coupled͒ third-order grating, which enables increased coupling strength and potentially lower threshold intensity.Fabrication of this device began with growth of a 4-mthick GaN:Si layer on c-face sapphire. On top of this layer, we grew a 500-nm-thick Al 0.08 Ga 0.92 N:Si lower cladding layer, a 100-nm-thick GaN lower waveguiding layer, and a 40-nm-thick active region with five In 0.1 Ga 0.9 N quantum wells ͑QWs͒ and GaN barriers. A 10-nm-thick Al 0.2 Ga 0.8 N:Mg overlayer and a 20-nm-thick portion of the GaN upper waveguiding layer completed this first growth step. The third-order grating with a period of 240 nm was then defined by holographic exposure by using two-beam interference with a 325 nm UV HeCd laser. Transfer into the semiconductor was achieved by dry etching in a chemically assisted ion-beam etching ͑CAIBE͒ system. 7 We then overgr...

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“…Ion milling rely on physical sputtering to achieve etching but this method is not practical for nitrides because of low etch rates and high ion-induced damage [6,7]. Therefore, methods of dry etching involving chemical mechanisms in addition to physical sputtering are the most effective for device applications.…”

Section: Dry Etchingmentioning

confidence: 99%

“…They include ion milling [6,7], chemically assisted ion beam etching (CAIBE) [8,9,55], reactive ion beam etching (RIBE) [10], reactive ion etching (RIE) [11][12][13][14][15], electron-cyclotronresonance reactive ion etching (ECR-RIE) [16][17][18][19][20][21], and inductively-coupled-plasma reactive ion etching (ICP-RIE) [22][23][24][25][26][27]. Optical excitation sources with photon energies higher than the bandgap energies of the semiconductors have been applied to both dry and wet etching methods.…”

Section: Dry Etchingmentioning

confidence: 99%

Dry and Wet Etching for Group III – Nitrides

Adesida

Youtsey

Ping

et al. 1999

MRS Internet j. nitride semicond. res.

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The group-III nitrides have become versatile semiconductors for short wavelength emitters, high temperature microwave transistors, photodetectors, and field emission tips. The processing of these materials is significant due to the unusually high bond energies that they possess. The dry and wet etching methods developed for these materials over the last few years are reviewed. High etch rates and highly anisotropic profiles obtained by inductively-coupled-plasma reactive ion etching are presented. Photoenhanced wet etching provides an alternative path to obtaining high etch rates without ion-induced damage. This method is shown to be suitable for device fabrication as well as for the estimation of dislocation densities in n-GaN. This has the potential of developing into a method for rapid evaluation of materials.

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Characteristics of chemically assisted ion beam etching of gallium nitride

Cited by 88 publications

References 13 publications

High Etch Rate and Smooth Morphology Using a Novel Chemistry in Reactive Ion Etching of GaN

High Etch Rate and Smooth Morphology Using a Novel Chemistry in Reactive Ion Etching of GaN

Realization of a complex-coupled InGaN/GaN-based optically pumped multiple-quantum-well distributed-feedback laser

Dry and Wet Etching for Group III – Nitrides

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