Characteristics of a silicon carbide field emission array under pre-breakdown conditions
Morozov V.A.,
Egorov N.V.,
Trofimov V.V.
et al.
Abstract:This study assesses promising field electron sources based on silicon carbide monolithic field emission array (FEA). FEA is fabricated on single-crystal wafers of silicon carbide (0001C) 6H-SiC of n-type conductivity using the technology of two-stage reactive ion etching in SF6/O2/Ar atmosphere. To implement conditions close to breakdown, an experimental setup based on high-voltage narrow pulses generating device GKVI-300 was used. A series of nanosecond voltage pulses with amplitudes from 120 to 250 kV was ge… Show more
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