Characteristics of a GaN-Based Light-Emitting Diode With an Inserted p-GaN/i-InGaN Superlattice Structure

Liu, Yi-Jung; Tsai, Tsung-Yuan; Yen, Chih−Hung; Chen, Li‐Yang; Tsai, Tsung-Han; Liu, Wen‐Chau

doi:10.1109/jqe.2009.2037337

Cited by 26 publications

(19 citation statements)

References 26 publications

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“…Therefore, we obtained lower direct resistance using the SL or undoped/Si-doped structure. The SL improves the current spread and electron distribution 13,14 and reduction of internal polarization fields and strains in the active region 15 . Hence, we speculate forward voltage was decreased by the prevention of carrier crowding and the improved the electron distribution.…”

Section: Methodsmentioning

confidence: 99%

Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate

Yamashita

Sugiyama

Iwai

et al. 2014

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII

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A GaN layer of 20 µm thickness grown by the liquid-phase epitaxy on c-plane sapphire was used as a template for the growth of blue light-emitting diodes (LEDs) with emission peak wavelengths of about 450 nm. As the underlying layer of the active region, an InGaN/GaN superlattice or two pairs of 100 nm undoped GaN and 20 nm GaN:Si layers on an n-type GaN:Si layer was found to be effective for reducing the forward voltage. By optimizing the multiple-quantumwell structure, LEDs having a 2.5-nm-thick InGaN well and 5-nm-thick GaN barrier exhibited the highest internal quantum efficiency (IQE) at both low and high currents. This IQE was much higher than that of LEDs on a sapphire substrate. The IQE of LEDs using the liquid-phase GaN grown on sapphire substrate exceeded more than 75% at a forward current density of over 200 A/cm 2 .

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Section: Methodsmentioning

confidence: 99%

Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate

Yamashita

Sugiyama

Iwai

et al. 2014

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII

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“…It has been demonstrated that the SL insertion layer results in increase of IQE [5,6] and smaller photoluminescence (PL) peak shift with injection [4] due to supposedly smaller defect density and lower internal electrical fields. SL was also used to improve the electroluminescence due to better hole injection and current spreading [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Enhancement of quantum efficiency in InGaN quantum wells by using superlattice interlayers and pulsed growth

Nomeika¹,

Dmukauskas²,

Aleksiejūnas³

et al. 2016

Lith. J. Phys.

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Enhancement of internal quantum efficiency (IQE) in InGaN quantum wells by insertion of a superlattice interlayer and applying the pulsed growth regime is investigated by a set of time-resolved optical techniques. A threefold IQE increase was achieved in the structure with the superlattice. It was ascribed to the net effect of decreased internal electrical field due to lower strain and altered carrier localization conditions. Pulsed MOCVD growth also resulted in twice higher IQE, presumably due to better control of defects in the structure. An LED (light emitting diode) structure with a top p-type contact GaN layer was manufactured by using both growth techniques with the peak IQE equal to that in the underlying quantum well structure. The linear recombination coefficient was found to gradually increase with excitation due to carrier delocalization, and the latter dependence was successfully used to fit the IQE droop.

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“…In order to improve IQE and light extraction efficiency, many methods such as the dislocations reduction, the couple multiple quantum wells [21], the non-polarized active region [22], and grade-well-thickness structure [23] have been explored. Especially, a GaN-based LED with a ten-period i (undoped)-InGaN super lattice (SL) structure is fabricated and shown the increase of EQE and the decrease of dislocation [24]. In addition, Shibata et al [25] had reported the growth of high quality GaN thick films on sapphire substrate by using hydride vapor phase epitaxy, and an interesting design of LED heterostructure with short-period superlattice in the active region is proposed [26].…”

Section: Introductionmentioning

confidence: 99%

A GaN-Based LED With Perpendicular Structure Fabricated on a ZnO Substrate by MOCVD

Yan

Zhu

et al. 2013

J. Display Technol.

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A perpendicular InGaN/GaN multiple-quantumwells structure on ZnO substrate for blue light emitting diode (LED) was successfully fabricated by use of Metal-organic Chemical Vapor Deposition (MOCVD). During the growing process of GaN-based materials on ZnO substrates, the low-temperature-grown GaN buffer layer, inserted between ZnO substrate and undoped GaN layer, prevented the Zn and O from diffusing from ZnO substrate into the n-GaN layer. This thin GaN buffer layer, mainly as a insulating layer, was grown at relatively low temperature of 530 C. By using our method, an integrated LED with ZnO substrate can be fabricated with a crack-free GaN film on (0001) ZnO substrate by MOCVD using this method. The epilayer crystalline structure has been measured by atomic force microscopy (AFM), and the optical properties of the LED were also characterized by photoluminescence and Current-Voltage characteristic curve.Index Terms-GaN, metal-organic chemical vapor deposition (MOCVD), substrate, ZnO.

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Characteristics of a GaN-Based Light-Emitting Diode With an Inserted p-GaN/i-InGaN Superlattice Structure

Cited by 26 publications

References 26 publications

Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate

Reduction of efficiency droop in InGaN light-emitting diodes on low dislocation density GaN substrate

Enhancement of quantum efficiency in InGaN quantum wells by using superlattice interlayers and pulsed growth

A GaN-Based LED With Perpendicular Structure Fabricated on a ZnO Substrate by MOCVD

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