Characteristics of [6]phenacene thin film field-effect transistor

Komura, Noriko; Goto, Hidenori; He, Xuexia; Mitamura, Hiroki; Eguchi, Ritsuko; Kaji, Yumiko; Okamoto, Hideki; Sugawara, Yasutake; Gohda, Shin; Sato, Kaori; Kubozono, Yoshihiro

doi:10.1063/1.4747201

Cited by 44 publications

(72 citation statements)

References 19 publications

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“…Since this distance is too long, the structure may be different from other phenacenes. The inclination angle of picene-(C 14 H 29 ) 2 with respect to the reciprocal lattice c * (| c *| = 1/ d 001 ) is estimated to be ~30° which is almost the same as that of other phenacenes16182031. The XRD pattern of a powder sample of picene-(C 14 H 29 ) 2 is shown in Figures 1(c) and 3(b).…”

Section: Resultsmentioning

confidence: 78%

“…Therefore, this stacking pattern is different from that of thin films of other phenacene molecules, in which the ab -plane is parallel-stacked on the SiO 2 surface, because there only 00l reflections are observed16182031. The d 100 which refers to the bc -layer spacing can be determined to be 1.368 nm, where the space group is assumed to be the same as that of picene (monoclinic: No.…”

Section: Resultsmentioning

confidence: 93%

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Transistor application of alkyl-substituted picene

Okamoto

Hamao

Goto

et al. 2014

Sci Rep

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Field-effect transistors (FETs) were fabricated with a thin film of 3,10-ditetradecylpicene, picene-(C14H29)2, formed using either a thermal deposition or a deposition from solution (solution process). All FETs showed p-channel normally-off characteristics. The field-effect mobility, μ, in a picene-(C14H29)2 thin-film FET with PbZr0.52Ti0.48O3 (PZT) gate dielectric reached ~21 cm2 V−1 s−1, which is the highest μ value recorded for organic thin-film FETs; the average μ value (<μ>) evaluated from twelve FET devices was 14(4) cm2 V−1 s−1. The <μ> values for picene-(C14H29)2 thin-film FETs with other gate dielectrics such as SiO2, Ta2O5, ZrO2 and HfO2 were greater than 5 cm2 V−1 s−1, and the lowest absolute threshold voltage, |Vth|, (5.2 V) was recorded with a PZT gate dielectric; the average |Vth| for PZT gate dielectric is 7(1) V. The solution-processed picene-(C14H29)2 FET was also fabricated with an SiO2 gate dielectric, yielding μ = 3.4 × 10−2 cm2 V−1 s−1. These results verify the effectiveness of picene-(C14H29)2 for electronics applications.

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Section: Resultsmentioning

confidence: 78%

Section: Resultsmentioning

confidence: 93%

Transistor application of alkyl-substituted picene

Okamoto

Hamao

Goto

et al. 2014

Sci Rep

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“…This is due to the little-changed length of the long axis of the molecule, while the electronic structures clearly did change in acene-type molecules because of their changed length13. The crystal structures of these molecules are similar to each other (herringbone), although the defined axis directions are different in [6]phenacene from other molecules, picene and [7]phenacene16810. The ab -plane of the crystals of phenacene-type molecules grows parallel to the surface of SiO 2 (or other gate dielectrics), which is preferable for FET channel conduction because conduction occurs in the ab -plane910.…”

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confidence: 99%

An Extended Phenacene-type Molecule, [8]Phenacene: Synthesis and Transistor Application

Okamoto

Eguchi

Hamao

et al. 2014

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A new phenacene-type molecule, [8]phenacene, which is an extended zigzag chain of coplanar fused benzene rings, has been synthesised for use in an organic field-effect transistor (FET). The molecule consists of a phenacene core of eight benzene rings, which has a lengthy π-conjugated system. The structure was verified by elemental analysis, solid-state NMR, X-ray diffraction (XRD) pattern, absorption spectrum and photoelectron yield spectroscopy (PYS). This type of molecule is quite interesting, not only as pure chemistry but also for its potential electronics applications. Here we report the physical properties of [8]phenacene and its FET application. An [8]phenacene thin-film FET fabricated with an SiO2 gate dielectric showed clear p-channel characteristics. The highest μ achieved in an [8]phenacene thin-film FET with an SiO2 gate dielectric is 1.74 cm2 V−1 s−1, demonstrating excellent FET characteristics; the average μ was evaluated as 1.2(3) cm2 V−1 s−1. The μ value in the [8]phenacene electric-double-layer FET reached 16.4 cm2 V−1 s−1, which is the highest reported in EDL FETs based on phenacene-type molecules; the average μ was evaluated as 8(5) cm2 V−1 s−1. The μ values recorded in this study show that [8]phenacene is a promising molecule for transistor applications.

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“…Treatment of regioisomeric mixtures of these vinyl ethers with a catalytic amount of Bi(OTf) 3 or AuCl 3 furnished the expected 3,11-dialkylfulminenes 1a−1c, respectively, in good yield. 9 These sequential reactions can be also applied to the construction of other phenacenes, including the dialkylated picene ( [5]phenacene) 4a−d as shown in Scheme 2. In this synthesis, the building blocks used were slightly modified due to the instability of the corresponding aldimine derived from 2-phthalaldehyde.…”

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confidence: 99%

“…4,5 Their performance has improved significantly over recent years, and we have reported that the mobility (μ) reaches 20.9 cm 2 V −1 s −1 , which is the highest among the pchannel organic thin-film FETs. 6 This value was achieved by [5]phenacene (picene) containing two tetradecyl groups ( n C 14 H 29 ) at the axis positions (3 and 10 positions on the picene backbone). Considering the fact that the μ of picene with no substituents is less than 5 cm 2 V −1 s −1 , the incorporation of alkyl side chains into other [n]phenacene backbones should offer new insights into the development of high performance organic FET devices.…”

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confidence: 99%

Transition-Metal-Catalyzed Facile Access to 3,11-Dialkylfulminenes for Transistor Applications

Murai¹,

Maekawa²,

Hamao³

et al. 2015

Org. Lett.

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Novel [6]phenacenes (fulminenes) with two long alkyl chains at the axis positions were synthesized. This short synthesis comprises the following three steps: (1) ruthenium-catalyzed direct C-H bond arylation; (2) conversion of directing groups by Wittig reaction; and (3) bismuth- or gold-catalyzed cyclization of vinyl ether. Organic field-effect transistor devices fabricated with a thin film of 3,11-di(tetradecyl)fulminene exhibited typical p-channel normally-off properties.

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Characteristics of [6]phenacene thin film field-effect transistor

Cited by 44 publications

References 19 publications

Transistor application of alkyl-substituted picene

Transistor application of alkyl-substituted picene

An Extended Phenacene-type Molecule, [8]Phenacene: Synthesis and Transistor Application

Transition-Metal-Catalyzed Facile Access to 3,11-Dialkylfulminenes for Transistor Applications

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