2004
DOI: 10.1016/j.apsusc.2003.12.017
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Characteristics and processing effects of ZrO2 thin films grown by metal-organic molecular beam epitaxy

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Cited by 55 publications
(19 citation statements)
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“…The peaks at 183.3 and 185.7 eV correspond to Zr 3d5/2 and Zr 3d3/2, respectively. 20 According to the peak areas of O 1s and Zr 3d and the sensitive factors, a Zr/O ratio of close to 1 to 2 is obtained…”
Section: Resultsmentioning
confidence: 99%
“…The peaks at 183.3 and 185.7 eV correspond to Zr 3d5/2 and Zr 3d3/2, respectively. 20 According to the peak areas of O 1s and Zr 3d and the sensitive factors, a Zr/O ratio of close to 1 to 2 is obtained…”
Section: Resultsmentioning
confidence: 99%
“…The four ZrO 2 -containing samples (ZrO 2 , Fe@ZrO 2 -A, Fe@ZrO 2 -N, and Fe@ZrO 2 -B NPs) produced core level spectra, all containing two characteristic peaks that indicate the existence of defect structures within the NPs, but with different levels of intensities (Fig. 6); peaks corresponding to Zr 3 d 5/2 at 181.9 eV (Zr x+ ) and O 1 s at 531.8 eV (sub oxide) 54,55 . Interestingly, the spectra from Fe@ZrO 2 -B NPs had the highest intensities of the peaks for the states of Zr x+ and O sub-oxide.…”
Section: Resultsmentioning
confidence: 99%
“…As a result, the oxide thickness is decreased and the accumulation capacitance is increased. It was found that small O 2 /Ar ratio also causes the hydrocarbon-rich plasma and limits crystal size resulting in the increase of the accumulation capacitance (Kim et al, 2004). Based on the results for 2Â XRD scan shown in Fig.…”
Section: Fig 2 -The Main Effect Plots For the Accumulation Capacitanmentioning
confidence: 97%