Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

Chang, Kuan‐Chang; Tsai, Tsung‐Ming; Chang, Ting‐Chang; Wu, Hsing-Hua; Chen, Jung‐Hui; Syu, Yong-En; Chang, Gerard J.; Chu, Tian-Jian; Liu, Guan-Ru; Su, Yi-Sheng; Chen, Min-Chen; Pan, Jhih-Hong; Chen, Jianyu; Tung, Cheng-Wei; Huang, Hui‐Chun; Tai, Ya‐Hsiang; Gan, Dershin; Sze, Simon M.

doi:10.1109/led.2013.2241725

Cited by 65 publications

(21 citation statements)

References 14 publications

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“…While resistance changes in silicon oxide, other than destructive dielectric breakdown, have been somewhat neglected, it is in most cases a fully foundry‐compatible material. Furthermore, SiO x ReRAM devices have been the subject of differences of opinion—some literature suggests that resistance switching in metal‐free silicon oxide is not possible . On the contrary, it is very much possible and could potentially provide many advantages over other ReRAM material systems, as we shall demonstrate in the following section.…”

Section: Introductionmentioning

confidence: 96%

Silicon Oxide (SiO_x): A Promising Material for Resistance Switching?

et al. 2018

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Interest in resistance switching is currently growing apace. The promise of novel high-density, low-power, high-speed nonvolatile memory devices is appealing enough, but beyond that there are exciting future possibilities for applications in hardware acceleration for machine learning and artificial intelligence, and for neuromorphic computing. A very wide range of material systems exhibit resistance switching, a number of which-primarily transition metal oxides-are currently being investigated as complementary metal-oxide-semiconductor (CMOS)-compatible technologies. Here, the case is made for silicon oxide, perhaps the most CMOS-compatible dielectric, yet one that has had comparatively little attention as a resistance-switching material. Herein, a taxonomy of switching mechanisms in silicon oxide is presented, and the current state of the art in modeling, understanding fundamental switching mechanisms, and exciting device applications is summarized. In conclusion, silicon oxide is an excellent choice for resistance-switching technologies, offering a number of compelling advantages over competing material systems.

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Section: Introductionmentioning

confidence: 96%

Silicon Oxide (SiO_x): A Promising Material for Resistance Switching?

et al. 2018

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“…In fact, there have been statements in the literature that suggest that intrinsic resistive switching in silicon oxide is not possible. 9 Nevertheless, there is a long history of research into resistance changes in silicon oxide. Early work dates back to the 1960s and 1970s, at which time the irreversible electrical breakdown of silicon dioxide was at the forefront of interest as integrated microelectronics technology was maturing.…”

Section: Introductionmentioning

confidence: 99%

Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory

Mehonić¹,

Buckwell²,

Montesi³

et al. 2015

Journal of Applied Physics

104

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We present an investigation of structural changes in silicon-rich silicon oxide metal-insulatormetal resistive RAM devices. The observed unipolar switching, which is intrinsic to the bulk oxide material and does not involve movement of metal ions, correlates with changes in the structure of the oxide. We use atomic force microscopy, conductive atomic force microscopy, x-ray photoelectron spectroscopy, and secondary ion mass spectroscopy to examine the structural changes occurring as a result of switching. We confirm that protrusions formed at the surface of samples during switching are bubbles, which are likely to be related to the outdiffusion of oxygen. This supports existing models for valence-change based resistive switching in oxides. In addition, we describe parallel linear and nonlinear conduction pathways and suggest that the conductance quantum, G 0 , is a natural boundary between the high and low resistance states of our devices. V C 2015 AIP Publishing LLC. [http://dx

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“…Chang and Sze have undertaken extensive studies of silicon oxide doped with a variety of metals to instigate extrinsic switching (see, for example, [40]). …”

Section: Extrinsic Filamentary Resistive Switchingmentioning

confidence: 99%

Resistive Switching in Oxides

Mehonić¹,

Kenyon²

2015

Defects at Oxide Surfaces

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Resistive switching in oxides, the phenomenon whereby the resistance of samples of the matrix can be cycled between states with contrasts of up to several orders of magnitude, has received growing attention over the past decade thanks to the possibility of exploiting this effect in novel memory technologies. Here we summarise the current state of the art in the field, paying particular attention to the underlying mechanisms of switching, which involves the creation of defects in the oxide. We also describe potential technological applications. IntroductionRecent years have seen a rapid growth of interest in materials whose electrical resistance can be changed by the application of an electric field. Of course, the phenomenon of irreversible electrical breakdown (so-called "hard breakdown") in oxides has long been studied as a failure mechanism in microelectronics-initially in capacitors and high voltage devices, then in thin films in integrated microelectronics-and, as such, is of great interest to industry as a problem to be mitigated. However, the resistive switching we refer to here is a reversible process whereby material can be cycled between two or more resistance states many times, enabling non-volatile memory technologies. Because of the range of potential technological applications-from replacements for existing technologies such as flash, to novel neuromorphic (neuron-mimicking) systems-resistive switching is now seen as an opportunity rather than a problem, and academic and industrial interest has grown to the point at which there are several hundred publications per year on all aspects of resistive switching materials and devices. Although we will not discuss fundamental issues associated with defect formation on oxides, these can be found in other chapters in the volume.

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Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

Cited by 65 publications

References 14 publications

Silicon Oxide (SiO_x): A Promising Material for Resistance Switching?

Silicon Oxide (SiO_x): A Promising Material for Resistance Switching?

Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory

Resistive Switching in Oxides

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Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

Cited by 65 publications

References 14 publications

Silicon Oxide (SiOx): A Promising Material for Resistance Switching?

Silicon Oxide (SiOx): A Promising Material for Resistance Switching?

Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory

Resistive Switching in Oxides

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Silicon Oxide (SiO_x): A Promising Material for Resistance Switching?

Silicon Oxide (SiO_x): A Promising Material for Resistance Switching?